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[7] = where ε is the creep strain, C is a constant dependent on the material and the particular creep mechanism, m and b are exponents dependent on the creep mechanism, Q is the activation energy of the creep mechanism, σ is the applied stress, d is the grain size of the material, k is the Boltzmann constant, and T is the absolute temperature.
By use of an optical strain measurement system spatial strain paths are evaluated immediately before failure of the test piece. Using an interpolation method for the strain variation between the severely deformed and necked area – the limits of this area are computed by a sign change of the second derivative of the strain distribution – the ...
Stress–strain analysis (or stress analysis) is an engineering discipline that uses many methods to determine the stresses and strains in materials and structures subjected to forces. In continuum mechanics , stress is a physical quantity that expresses the internal forces that neighboring particles of a continuous material exert on each other ...
This is a schematic illustrating how the lattice is strained by the addition of interstitial solute. Notice the strain in the lattice that the solute atoms cause. The interstitial solute could be carbon in iron for example. The carbon atoms in the interstitial sites of the lattice creates a stress field that impedes dislocation movement.
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In mechanics, strain is defined as relative deformation, compared to a reference position configuration. Different equivalent choices may be made for the expression of a strain field depending on whether it is defined with respect to the initial or the final configuration of the body and on whether the metric tensor or its dual is considered.
The strain can be decomposed into a recoverable elastic strain (ε e) and an inelastic strain (ε p). The stress at initial yield is σ 0 . Work hardening , also known as strain hardening , is the process by which a material's load-bearing capacity (strength) increases during plastic (permanent) deformation.
Strain can be induced in thin films with either epitaxial growth, or more recently, topological growth. Epitaxial strain in thin films generally arises due to lattice mismatch between the film and its substrate and triple junction restructuring at the surface triple junction, which arises either during film growth or due to thermal expansion mismatch. [5]