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The introduction of the transistor is often considered one of the most important inventions in history. [1] [2] Transistors are broadly classified into two categories: bipolar junction transistor (BJT) and field-effect transistor (FET). [3] The principle of a field-effect transistor was proposed by Julius Edgar Lilienfeld in 1925. [4]
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET), also known as the metal–oxide–silicon transistor (MOS transistor, or MOS), [71] is a type of field-effect transistor that is fabricated by the controlled oxidation of a semiconductor, typically silicon.
Heil is mentioned as the inventor of an early transistor-like device (see also History of the transistor), based on several patents that were issued to him. [3] [4] Erno Borbely states the following: "Field-effect transistors (FETs) have been around for a long time; in fact, they were invented, at least theoretically, before the bipolar ...
The SB-FET (Schottky-barrier field-effect transistor) is a field-effect transistor with metallic source and drain contact electrodes, which create Schottky barriers at both the source-channel and drain-channel interfaces. [64] [65] The GFET is a highly sensitive graphene-based field effect transistor used as biosensors and chemical sensors.
The three scientists were jointly awarded the 1956 Nobel Prize in Physics for "their researches on semiconductors and their discovery of the transistor effect". [1] Partly as a result of Shockley's attempts to commercialize a new transistor design in the 1950s and 1960s, California's Silicon Valley became a hotbed of electronics innovation. He ...
The floating body effect is the effect of dependence of the body potential of a transistor realized by the silicon on insulator (SOI) technology on the history of its biasing and the carrier recombination processes. The transistor's body forms a capacitor against the insulated substrate.
This effect can be used to amplify the input voltage or current. BJTs can be thought of as voltage-controlled current sources, but are more simply characterized as current-controlled current sources, or current amplifiers, due to the low impedance at the base. Early transistors were made from germanium but most modern BJTs are made from silicon.
In 1956, the three men were jointly awarded the Nobel Prize in Physics by King Gustaf VI Adolf of Sweden "for research on semiconductors and the discovery of the transistor effect." [8] Bardeen and Brattain were included for the discovery of the point-contact transistor; Shockley for the development of the junction transistor. Walter Brattain ...