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Electrical breakdown in an electric discharge showing the ribbon-like plasma filaments from a Tesla coil.. In electronics, electrical breakdown or dielectric breakdown is a process that occurs when an electrically insulating material (a dielectric), subjected to a high enough voltage, suddenly becomes a conductor and current flows through it.
A useful macroscopic model that combines an electric field with DLA was developed by Niemeyer, Pietronero, and Weismann in 1984, and is known as the dielectric breakdown model (DBM). [7] Although the electrical breakdown mechanisms of air and PMMA plastic are considerably different, the branching discharges turn out to be related.
Electrical treeing first occurs and propagates when a dry dielectric material is subjected to high and divergent electrical field stress over a long period of time. . Electrical treeing is observed to originate at points where impurities, gas voids, mechanical defects, or conducting projections cause excessive electrical field stress within small regions of the di
Where V is the applied voltage, V BR is the breakdown voltage and n is an empirically derived value between 2 and 6. As can be seen from this formula, the multiplication factor is very highly dependent on the applied voltage, and as the voltage nears the breakdown voltage of the material, the multiplication factor approaches infinity and the ...
Dielectric breakdown model (DBM) is a macroscopic mathematical model combining the diffusion-limited aggregation model with electric field. It was developed by Niemeyer, Pietronero, and Weismann in 1984. [ 1 ]
Intrinsic breakdown is caused by electrical stress induced defect generation. Extrinsic breakdown is caused by defects induced by the manufacturing process. For Integrated circuits, the time to breakdown is dependent on the thickness of the dielectric (gate oxide) and also on the material type, which is dependent on the manufacturing process node.
Dielectric films tend to exhibit greater dielectric strength than thicker samples of the same material. For instance, the dielectric strength of silicon dioxide films of thickness around 1 μm is about 0.5 GV/m. [3] However very thin layers (below, say, 100 nm) become partially conductive because of electron tunneling.
IEC TS 61994 Piezoelectric, dielectric and electrostatic devices and associated materials for frequency control, selection and detection – Glossary; IEC 61995 Devices for the connection of luminaires for household and similar purposes; IEC 61996 Maritime navigation and radiocommunication equipment and systems – Shipborne voyage data ...