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The 2N3055 is a silicon NPN power transistor intended for general purpose applications. It was introduced in the early 1960s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mid-1970s. [ 1 ]
The popular 2N3055 power transistor in a TO-3 case has an internal thermal resistance from junction to case of 1.52 °C/W. [4] The contact between the device case and heat sink may have a thermal resistance between 0.5 and 1.7 °C/W, depending on the case size and use of grease or insulating mica washer. [3]
According to the manufacturer, the NAD 3020 is a high voltage design that uses the same large powerful output transistors (2N3055 and MJ2955) that "other manufacturers employ in their '60-watt' amplifiers", enabling the amplifier to deliver power headroom for musical transients. [7]
The JEDEC registration of a device number ensures particular rated values will be met by all parts offered under that number. JEDEC registered parameters include outline dimensions, small-signal current gain, transition frequency, maximum values for voltage withstand, current rating, power dissipation and temperature rating, and others, measured under standard test conditions.
The prefix is followed by a two-, three- or four-digit number with no significance as to device properties, although early devices with low numbers tend to be germanium devices. For example, 2N3055 is a silicon n–p–n power transistor, 2N1301 is a p–n–p germanium switching transistor. A letter suffix, such as "A", is sometimes used to ...
Size comparison of BJT transistor packages, from left to right: SOT-23, TO-92, TO-126, TO-3 3D model of TO-3 package. In electronics, TO-3 is a designation for a standardized metal semiconductor package used for power semiconductors, including transistors, silicon controlled rectifiers, and, integrated circuits.
2N3906 transistors in plastic TO-92 packaging. The cases are marked with E, B, and C for lead identification. Photomicrograph of the transistor chip inside a 2N3906 transistor package, showing the conductive metal layers used to connect the semiconductor junctions to the package leads.
1 2N3055. 4 comments. 2 Object to deletion. 10 comments. 3 Unclear. 3 comments. 4 Suggestions. 16 comments Toggle Suggestions subsection. 4.1 hometaxial. 4.2 Deletion ...
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