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An alternative, which is used for voltage references that need to be highly stable over long periods of time, is to use a Zener diode with a temperature coefficient (TC) of +2 mV/°C (breakdown voltage 6.2–6.3 V) connected in series with a forward-biased silicon diode (or a transistor B-E junction) manufactured on the same chip. [4]
Regulating voltages varies from 2.4V to 75V with a total power dissipation maximum of 500 mW. In some datasheets, the series is labelled as zener diode, [2] but this is not always the case as the series relies on avalanche breakdown for higher voltage. [3] The BZT52 series is a good surface-mount equivalent for the BZT79 series.
In electronics, the Zener effect (employed most notably in the appropriately named Zener diode) is a type of electrical breakdown, discovered by Clarence Melvin Zener. It occurs in a reverse biased p-n diode when the electric field enables tunneling of electrons from the valence to the conduction band of a semiconductor , leading to numerous ...
The most stable diodes of this type are made by temperature-compensating a Zener diode by placing it in series with a forward diode; such diodes are made as two-terminal devices, e.g. the 1N821 series having an overall voltage drop of 6.2 V at 7.5 mA, but are also sometimes included in integrated circuits.
The DO-35 (also known as DO-204-AH or SOD27) is a semiconductor package used to encapsulate signal diodes (i.e., diodes meant to handle small amounts of current and voltage). [ 10 ] [ 13 ] [ 2 ] It is often used to package small signal, low power diodes such as 1N4148 (a 100 V, 300 mA silicon diode.)
Various semiconductor diodes. Left: A four-diode bridge rectifier. Next to it is a 1N4148 signal diode. On the far right is a Zener diode. In most diodes, a white or black painted band identifies the cathode into which electrons will flow when the diode is conducting. Electron flow is the reverse of conventional current flow. [1] [2] [3]
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