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The wafers can be cleaned using H 2 O 2 + H 2 SO 4 or oxygen plasma. The cleaned wafers are rinsed with DI water and dried at elevated temperature, e.g. 100 to 200 °C for 120 min. [17] The adhesion promoter with a specific thickness is deposited, i.e. spin-coated or contact printed on the wafer to improve the bonding strength.
Wafer bonding is a packaging technology on wafer-level for the fabrication of microelectromechanical systems (MEMS), nanoelectromechanical systems (NEMS), microelectronics and optoelectronics, ensuring a mechanically stable and hermetically sealed encapsulation. The wafers' diameter range from 100 mm to 200 mm (4 inch to 8 inch) for MEMS/NEMS ...
The procedural steps of the direct bonding process of wafers any surface is divided into wafer preprocessing, pre-bonding at room temperature and; annealing at elevated temperatures. Even though direct bonding as a wafer bonding technique is able to process nearly all materials, silicon is the most established material up to now. Therefore, the ...
Surface activated bonding (SAB) is a non-high-temperature wafer bonding technology with atomically clean and activated surfaces. Surface activation prior to bonding by using fast atom bombardment is typically employed to clean the surfaces. High-strength bonding of semiconductors, metals, and dielectrics can be obtained even at room temperature ...
The wafer bond characterization is based on different methods and tests. Considered a high importance of the wafer are the successful bonded wafers without flaws. Those flaws can be caused by void formation in the interface due to unevenness or impurities .
There are several methods for 3D IC design, including recrystallization and wafer bonding methods. There are two major types of wafer bonding, Cu-Cu connections (copper-to-copper connections between stacked ICs, used in TSVs) [18] [19] and through-silicon via (TSV). 3D ICs with TSVs may use solder microbumps, small solder balls as an interface between two individual dies in a 3D IC. [20]
Wafer bonding is a packaging technology for materials integration as well as for hermetic sealing and encapsulation. This method describes the process for all suitable bonding techniques that enable the contacting of two or more wafers.
Glass frit bonding, also referred to as glass soldering or seal glass bonding, describes a wafer bonding technique with an intermediate glass layer. It is a widely used encapsulation technology for surface micro-machined structures , e.g., accelerometers or gyroscopes . [ 1 ]