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The static qualifier differentiates SRAM from dynamic random-access memory (DRAM): SRAM will hold its data permanently in the presence of power, while data in DRAM decays in seconds and thus must be periodically refreshed. SRAM is faster than DRAM but it is more expensive in terms of silicon area and cost.
SRAM consists of a series of transistors arranged in a flip-flop, which will hold one of two states as long as power is applied. Since the transistors have a very low power requirement, their switching time is very low. However, since an SRAM cell consists of several transistors, typically four or six, its density is much lower than DRAM.
It is a set of small DRAM banks with an SRAM cache in front to make it behave much like a true SRAM. It is used in Nintendo GameCube and Wii video game consoles. Cypress Semiconductor 's HyperRAM [ 66 ] is a type of PSRAM supporting a JEDEC -compliant 8-pin HyperBus [ 67 ] or Octal xSPI interface.
[a] DRAM dominates for desktop system memory. SRAM is used for CPU cache. SRAM is also found in small embedded systems requiring little memory. SRAM retains its contents as long as the power is connected and may use a simpler interface, but commonly uses six transistors per bit. Dynamic RAM is more complicated for interfacing and control ...
The two main types of volatile random-access semiconductor memory are static random-access memory (SRAM) and dynamic random-access memory (DRAM). Non-volatile RAM has also been developed [ 3 ] and other types of non-volatile memories allow random access for read operations, but either do not allow write operations or have other kinds of ...
SRAM is less dense and more expensive per bit than DRAM, but faster and does not require memory refresh. It is used for smaller cache memories in computers. CAM ( Content-addressable memory ) – This is a specialized type in which, instead of accessing data using an address, a data word is applied and the memory returns the location if the ...
SRAM typically has six-transistor cells, whereas DRAM (dynamic random-access memory) typically has single-transistor cells. [ 17 ] [ 15 ] In 1965, Toshiba 's Toscal BC-1411 electronic calculator used a form of capacitive bipolar DRAM, storing 180-bit data on discrete memory cells, consisting of germanium bipolar transistors and capacitors.
Pseudostatic RAM (PSRAM or PSDRAM) is dynamic RAM with built-in refresh and address-control circuitry to make it behave similarly to SRAM. It combines the high density of DRAM with the ease of use of true SRAM. PSRAM (made by Numonyx) is used in the Apple iPhone and other embedded systems. [17] Some DRAM components have a self-refresh standby mode.