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Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The static qualifier differentiates SRAM from dynamic random-access memory (DRAM):
The two widely used forms of modern RAM are static RAM (SRAM) and dynamic RAM (DRAM). In SRAM, a bit of data is stored using the state of a six-transistor memory cell, typically using six MOSFETs. This form of RAM is more expensive to produce, but is generally faster and requires less dynamic power than DRAM. In modern computers, SRAM is often ...
Every single bit in a static RAM chip needs a cell of six transistors, whereas dynamic RAM requires only one capacitor and one transistor. As a result, SRAM is unable to accomplish the storage capabilities of the DRAM family. [3] SRAM is commonly used as CPU cache and for processor registers and in networking devices.
The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell. Non-volatile memory (such as EPROM, EEPROM and flash memory) uses floating-gate memory cells, which consist of a single floating-gate transistor per ...
[a] DRAM dominates for desktop system memory. SRAM is used for CPU cache. SRAM is also found in small embedded systems requiring little memory. SRAM retains its contents as long as the power is connected and may use a simpler interface, but commonly uses six transistors per bit. Dynamic RAM is more complicated for interfacing and control ...
High Bandwidth Memory (HBM) is a computer memory interface for 3D-stacked synchronous dynamic random-access memory (SDRAM) initially from Samsung, AMD and SK Hynix.It is used in conjunction with high-performance graphics accelerators, network devices, high-performance datacenter AI ASICs, as on-package cache in CPUs [1] and on-package RAM in upcoming CPUs, and FPGAs and in some supercomputers ...
DDR4 RAM operates at a voltage of 1.2 V and supports frequencies between 800 and 1600 MHz (DDR4-1600 through DDR4-3200). Compared to DDR3, which operates at 1.5 V with frequencies from 400 to 1067 MHz (DDR3-800 through DDR3-2133), DDR4 offers better performance and energy efficiency. DDR4 speeds are advertised as double the base clock rate due ...
Since the DRAM memory cell stores its value as the charge of a capacitor, and there are current leakage issues, its value must be constantly rewritten. This is one of the reasons that make DRAM cells slower than the larger SRAM (static RAM) cells, which has its value always available.