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Diffusion current is a current in a semiconductor caused by the diffusion of charge carriers (electrons and/or electron holes). This is the current which is due to the transport of charges occurring because of non-uniform concentration of charged particles in a semiconductor.
This process generates current, referred to as diffusion current. Diffusion current can also be described by Fick's first law = /, where J is the diffusion current density (amount of substance) per unit area per unit time, n (for ideal mixtures) is the electron density, x is the position [length].
The drift velocity, and resulting current, is characterized by the mobility; for details, see electron mobility (for solids) or electrical mobility (for a more general discussion). See drift–diffusion equation for the way that the drift current, diffusion current, and carrier generation and recombination are combined into a single equation.
This diffusion current is governed by Fick's law: = where: F is flux. D e is the diffusion coefficient or diffusivity; is the concentration gradient of electrons; The diffusion coefficient for a charge carrier is related to its mobility by the Einstein relation.
Fick's first law relates the diffusive flux to the gradient of the concentration. It postulates that the flux goes from regions of high concentration to regions of low concentration, with a magnitude that is proportional to the concentration gradient (spatial derivative), or in simplistic terms the concept that a solute will move from a region of high concentration to a region of low ...
The flow of particles due to the diffusion current is, by Fick's law, = (), where the minus sign means that particles flow from higher to lower concentration. Now consider the equilibrium condition. First, there is no net flow, i.e. J d r i f t + J d i f f u s i o n = 0 {\displaystyle \mathbf {J} _{\mathrm {drift} }+\mathbf {J} _{\mathrm ...
The saturation current (or scale current), more accurately the reverse saturation current, is the part of the reverse current in a semiconductor diode caused by diffusion of minority carriers from the neutral regions to the depletion region. This current is almost independent of the reverse voltage. [1]
If the maximum currents of each drop were connected, a sigmoidal shape would result. The limiting current (the plateau on the sigmoid), is called the diffusion-limited current because diffusion is the principal contribution to the flux of the electroactive material at this point of the Hg drop life.