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Pre-gate cleaning is the most critical cleaning step in CMOS fabrication: it ensures that the ca. 2 nm thick oxide of a MOS transistor can be grown in an orderly fashion. Oxidation, and all high temperature steps are very sensitive to contamination, and cleaning steps must precede high temperature steps.
In semiconductor manufacturing, a low-κ is a material with a small relative dielectric constant (κ, kappa) relative to silicon dioxide.Low-κ dielectric material implementation is one of several strategies used to allow continued scaling of microelectronic devices, colloquially referred to as extending Moore's law.
NEMS form the next logical miniaturization step from so-called microelectromechanical systems, or MEMS devices. NEMS typically integrate transistor-like nanoelectronics with mechanical actuators, pumps, or motors, and may thereby form physical, biological, and chemical sensors.
Microwave Office - RF/microwave circuit simulation, APLAC - Harmonic balance solver for nonlinear, frequency domain circuit simulation; Analog Office - analog/RFIC simulation; Visual System Simulator (VSS) - system level communication/radar simulator; EM solvers: AXIEM (3D planar electromagnetic simulator) – 3D planar, Method of Moments
The steps involving testing and packaging of dies, followed by final testing of finished, packaged chips, are called the back end, [118] post-fab, [192] ATMP (Assembly, Test, Marking, and Packaging) [193] or ATP (Assembly, Test and Packaging) of semiconductor manufacturing, and may be carried out by OSAT (OutSourced Assembly and Test) companies ...
The $395 HP-35, along with nearly all later HP engineering calculators, uses reverse Polish notation (RPN), also called postfix notation. A calculation like "8 plus 5" is, using RPN, performed by pressing 8, Enter↑, 5, and +; instead of the algebraic infix notation: 8, +, 5, =. It had 35 buttons and was based on Mostek Mk6020 chip.
Glossary of microelectronics manufacturing terms This is a list of terms used in the manufacture of electronic micro-components. Many of the terms are already defined and explained in Wikipedia; this glossary is for looking up, comparing, and reviewing the terms.
Multi-gate MOSFET demonstrations ; Date Channel length MuGFET type Researcher(s) Organization Ref; August 1984? DGMOS: Toshihiro Sekigawa, Yutaka Hayashi Electrotechnical Laboratory (ETL)