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Flash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating gate MOSFETs. They differ at the circuit level depending on ...
Non-volatile memory (NVM) or non-volatile storage is a type of computer memory that can retain stored information even after power is removed. In contrast, volatile memory needs constant power in order to retain data. Non-volatile memory typically refers to storage in semiconductor memory chips, which store data in floating-gate memory cells ...
Flash memory was invented by Fujio Masuoka at Toshiba in 1980. [30] [31] Masuoka and his colleagues presented the invention of NOR flash in 1984, [32] and then NAND flash in 1987. [33] Multi-level cell (MLC) flash memory was introduced by NEC, which demonstrated quad-level cells in a 64 Mb flash chip storing 2-bit per cell in 1996.
Flash memory controller. Lexar USB stick 8 GB - Silicon Motion SM3253L - USB 2.0 single-channel flash controller. A flash memory controller (or flash controller) manages data stored on flash memory (usually NAND flash) and communicates with a computer or electronic device. Flash memory controllers can be designed for operating in low duty-cycle ...
Wear leveling. Wear leveling (also written as wear levelling) is a technique [1] for prolonging the service life of some kinds of erasable computer storage media, such as flash memory, which is used in solid-state drives (SSDs) and USB flash drives, and phase-change memory. There are several wear leveling mechanisms that provide varying levels ...
Website. www.onfi.org. The Open NAND Flash Interface Working Group (ONFI or ONFi[ 1 ] with a lower case "i") is a consortium of technology companies working to develop open standards for NAND flash memory and devices that communicate with them. The formation of ONFI was announced at the Intel Developer Forum in March 2006.
Charge trap flash (CTF) is a semiconductor memory technology used in creating non-volatile NOR and NAND flash memory. It is a type of floating-gate MOSFET memory technology, but differs from the conventional floating-gate technology in that it uses a silicon nitride film to store electrons rather than the doped polycrystalline silicon typical ...
NOR flash replacement. While flash memory remains one of the most popular storages in embedded systems because of its non-volatility, shock-resistance, small size, and low energy consumption, its application has grown much beyond its original design. Based on its original design, NOR flash memory is designed to store binary code of programs ...
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