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Flash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating gate MOSFETs. They differ at the circuit level depending on ...
The ONFI consortium included manufacturers of NAND flash memory such as Hynix, Intel, Micron Technology, Phison, Western Digital, Sony and Spansion. [2] Samsung, the world's largest manufacturer of NAND flash, was absent in 2006. [8] Vendors of NAND flash-based consumer electronics and computing products are also members.
Charge trap flash (CTF) is a semiconductor memory technology used in creating non-volatile NOR and NAND flash memory. It is a type of floating-gate MOSFET memory technology, but differs from the conventional floating-gate technology in that it uses a silicon nitride film to store electrons rather than the doped polycrystalline silicon typical ...
Flash memory was invented by Fujio Masuoka at Toshiba in 1980. [30] [31] Masuoka and his colleagues presented the invention of NOR flash in 1984, [32] and then NAND flash in 1987. [33] Multi-level cell (MLC) flash memory was introduced by NEC, which demonstrated quad-level cells in a 64 Mb flash chip storing 2-bit per cell in 1996.
Wear leveling. Wear leveling (also written as wear levelling) is a technique [1] for prolonging the service life of some kinds of erasable computer storage media, such as flash memory, which is used in solid-state drives (SSDs) and USB flash drives, and phase-change memory. There are several wear leveling mechanisms that provide varying levels ...
NOR flash replacement. While flash memory remains one of the most popular storages in embedded systems because of its non-volatility, shock-resistance, small size, and low energy consumption, its application has grown much beyond its original design. Based on its original design, NOR flash memory is designed to store binary code of programs ...
Download as PDF; Printable version; In other projects Appearance. move to sidebar hide ... Hamming ECC is commonly used to correct NAND flash memory errors. [6]
In a semiconductor memory chip, each bit of binary data is stored in a tiny circuit called a memory cell consisting of one to several transistors. The memory cells are laid out in rectangular arrays on the surface of the chip. The 1-bit memory cells are grouped in small units called words which are accessed together as a single memory address.
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