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  2. Shallow trench isolation - Wikipedia

    en.wikipedia.org/wiki/Shallow_trench_isolation

    Shallow trench isolation (STI), also known as box isolation technique, is an integrated circuit feature which prevents electric current leakage between adjacent semiconductor device components. STI is generally used on CMOS process technology nodes of 250 nanometers and smaller.

  3. Thyristor - Wikipedia

    en.wikipedia.org/wiki/Thyristor

    A thyristor (/ θ aɪ ˈ r ɪ s t ər /, from a combination of Greek language θύρα, meaning "door" or "valve", and transistor [1]) is a solid-state semiconductor device which can be thought of as being a highly robust and switchable diode, allowing the passage of current in one direction but not the other, often under control of a gate electrode, that is used in high power applications ...

  4. Beaufort's Dyke - Wikipedia

    en.wikipedia.org/wiki/Beaufort's_Dyke

    Beaufort's Dyke is a natural glacial formed trench within the North Channel between Northern Ireland and Scotland. The dyke is 50 kilometres (25 nautical miles) long, 3.5 kilometres (2 nautical miles) wide and 200–312 m (700–1,000 ft) deep. The Dyke is one of the deepest areas of the European continental shelf. [1]

  5. List of submarine topographical features - Wikipedia

    en.wikipedia.org/wiki/List_of_submarine...

    Trenches are generally parallel to a volcanic island arc, and about 200 km from a volcanic arc. Oceanic trenches typically extend 3 to 4 km (1.9 to 2.5 mi) below the level of the surrounding oceanic floor. The greatest ocean depth to be sounded is in the Challenger Deep of the Mariana Trench, at a depth of 10,911 m (35,798 ft) below sea level.

  6. Power MOSFET - Wikipedia

    en.wikipedia.org/wiki/Power_MOSFET

    NXP 7030AL - N-channel TrenchMOS logic level FET IRF640 Power Mosfet die. The power MOSFET is the most widely used power semiconductor device in the world. [3] As of 2010, the power MOSFET accounts for 53% of the power transistor market, ahead of the insulated-gate bipolar transistor (27%), RF power amplifier (11%) and bipolar junction transistor (9%). [24]

  7. Hikurangi Trough - Wikipedia

    en.wikipedia.org/wiki/Hikurangi_Trough

    Although shallower than the trenches north of it, the Hikurangi Trough reaches depths of 3,000 metres (9,800 feet) as close as 80 kilometres (50 miles) from shore. [2] The southern trough structure is 6–10 km (3.7–6.2 mi) wide off the coast of northern Canterbury with an initial local depth of about 2,000 m (6,600 ft), [3] and towards its northern portions it has structures more like those ...

  8. Challenger Deep - Wikipedia

    en.wikipedia.org/wiki/Challenger_Deep

    Sonar mapping of the Challenger Deep by the DSSV Pressure Drop employing a Kongsberg SIMRAD EM124 multibeam echosounder system (26 April – 4 May 2019). The Challenger Deep is a relatively small slot-shaped depression in the bottom of a considerably larger crescent-shaped oceanic trench, which itself is an unusually deep feature in the ocean floor.

  9. South Sandwich Trench - Wikipedia

    en.wikipedia.org/wiki/South_Sandwich_Trench

    The South Sandwich Trench is a deep arcuate trench in the South Atlantic Ocean lying 100 kilometres (62 mi) to the east of the South Sandwich Islands. It is the deepest trench of the Southern Atlantic Ocean, and the second-deepest of the Atlantic Ocean after the Puerto Rico Trench.