Search results
Results from the WOW.Com Content Network
Lithium is used for doping silicon for radiation hardened solar cells. The lithium presence anneals defects in the lattice produced by protons and neutrons. [21] Lithium can be introduced to boron-doped p+ silicon, in amounts low enough to maintain the p character of the material, or in large enough amount to counterdope it to low-resistivity n ...
For example, doping pure silicon with a small amount of phosphorus will increase the carrier density of electrons, n. Then, since n > p, the doped silicon will be a n-type extrinsic semiconductor. Doping pure silicon with a small amount of boron will increase the carrier density of holes, so then p > n, and it will be a p-type extrinsic ...
The tool is used primarily for determining doping structures in silicon semiconductors. Deep and shallow profiles are shown in Figure 2. Figure 2 The shallow profile on the left, the deep profile on the right. Carrier concentration is plotted against depth. Regions with a net electron concentration are denoted as "n" (or n-type).
Carrier mobility in semiconductors is doping dependent. In silicon (Si) the electron mobility is of the order of 1,000, in germanium around 4,000, and in gallium arsenide up to 10,000 cm 2 /(V⋅s). Hole mobilities are generally lower and range from around 100 cm 2 /(V⋅s) in gallium arsenide, to 450 in silicon, and 2,000 in germanium. [1]
The conductivity of silicon is increased by adding a small amount (of the order of 1 in 10 8) of pentavalent (antimony, phosphorus, or arsenic) or trivalent (boron, gallium, indium) atoms. [3] This process is known as doping, and the resulting semiconductors are known as doped or extrinsic semiconductors. Apart from doping, the conductivity of ...
The number density of the electron gas was assumed to be =, where Z is the effective number of de-localized electrons per ion, for which Drude used the valence number, A is the atomic mass per mole, [Ashcroft & Mermin 10] is the mass density (mass per unit volume) [Ashcroft & Mermin 10] of the "ions", and N A is the Avogadro constant.
The term p-type refers to the positive charge of a hole. As opposed to n-type semiconductors, p-type semiconductors have a larger hole concentration than electron concentration. In p-type semiconductors, holes are the majority carriers and electrons are the minority carriers. A common p-type dopant for silicon is boron or gallium.
The DLTS technique has a higher sensitivity than almost any other semiconductor diagnostic technique. For example, in silicon it can detect impurities and defects at a concentration of one part in 10 12 of the material host atoms. This feature together with a technical simplicity of its design made it very popular in research labs and ...