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For example, doping pure silicon with a small amount of phosphorus will increase the carrier density of electrons, n. Then, since n > p, the doped silicon will be a n-type extrinsic semiconductor. Doping pure silicon with a small amount of boron will increase the carrier density of holes, so then p > n, and it will be a p-type extrinsic ...
Doping of a pure silicon array. Silicon based intrinsic semiconductor becomes extrinsic when impurities such as boron and antimony are introduced.. In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties.
Carrier mobility in semiconductors is doping dependent. In silicon (Si) the electron mobility is of the order of 1,000, in germanium around 4,000, and in gallium arsenide up to 10,000 cm 2 /(V⋅s). Hole mobilities are generally lower and range from around 100 cm 2 /(V⋅s) in gallium arsenide, to 450 in silicon, and 2,000 in germanium. [1]
The tool is used primarily for determining doping structures in silicon semiconductors. Deep and shallow profiles are shown in Figure 2. Figure 2 The shallow profile on the left, the deep profile on the right. Carrier concentration is plotted against depth. Regions with a net electron concentration are denoted as "n" (or n-type).
The term p-type refers to the positive charge of a hole. As opposed to n-type semiconductors, p-type semiconductors have a larger hole concentration than electron concentration. In p-type semiconductors, holes are the majority carriers and electrons are the minority carriers. A common p-type dopant for silicon is boron or gallium.
Low-level injection conditions for a p–n junction, in physics and electronics, refers to the state where the number of minority carriers generated is small compared to the majority carriers of the material. The semiconductor's majority-carrier concentration will remain (relatively) unchanged, while the minority-carrier concentration sees a ...
Phosphorus atom acting as a donor in the simplified 2D silicon lattice. For example, when silicon (Si), having four valence electrons, is to be doped as a n-type semiconductor, elements from group V like phosphorus (P) or arsenic (As) can be used because they have five valence electrons. A dopant with five valence electrons is also called a ...
The following image shows change in excess carriers being generated (green:electrons and purple:holes) with increasing light intensity (generation rate /cm 3) at the center of an intrinsic semiconductor bar. Electrons have higher diffusion constant than holes leading to fewer excess electrons at the center as compared to holes.