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Paul K. Weimer, also of RCA, implemented Wallmark's ideas and developed the thin-film transistor (TFT) in 1962, a type of MOSFET distinct from the standard bulk MOSFET. It was made with thin films of cadmium selenide and cadmium sulfide. The idea of a TFT-based liquid-crystal display (LCD) was conceived by Bernard Lechner of RCA Laboratories in
The concept of a thin-film transistor (TFT) was first proposed by John Wallmark who in 1957 filed a patent for a thin film MOSFET in which germanium monoxide was used as a gate dielectric. Thin-film transistor was developed in 1962 by Paul K. Weimer who implemented Wallmark's ideas. [16] The TFT is a special type of MOSFET. [17]
In February 1957, John Wallmark of RCA filed a patent for a thin film MOSFET in which germanium monoxide was used as a gate dielectric. Paul K. Weimer, also of RCA implemented Wallmark's ideas and developed the thin-film transistor (TFT) in 1962, a type of MOSFET distinct from the
John Torkel Wallmark (4 June 1919 – 5 February 2007) was a Swedish electrical engineer and researcher in semiconductor electronics and innovation technology. Torkel Wallmark was born in Stockholm. He graduated from the Royal Institute of Technology in 1944, became technology licentiate in 1947 and technology doctor in 1953.
The TFT-LCD (Flat Panel) Antitrust Litigation [1] was a United States class-action lawsuit regarding the worldwide conspiracy to coordinate the prices of Thin-Film Transistor-Liquid Crystal Display (TFT-LCD) panels, which are used to make laptop computers, computer monitors and televisions, between 1999 and 2006.
An oxide thin-film transistor (oxide TFT) or metal oxide thin film transistor is a type of thin film transistor where the semiconductor is a metal oxide compound. An oxide TFT is distinct from a metal oxide field effect transistor ( MOSFET ) where the word "oxide" refers to the insulating gate dielectric (normally silicon dioxide ).
Some TFT displays do not allow a user to disable this, and will prevent the upper and lower portions of the screen from being used forcing a "letterbox" format when set to a 4:3 ratio. [citation needed] The 1280 × 1024 resolution became popular because at 24 bit/px color depth it fits well into 4 megabytes of video RAM.
CMOS inverter (a NOT logic gate). Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss ", / s iː m ɑː s /, /-ɒ s /) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. [1]