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A translinear circuit is a circuit that carries out its function using the translinear principle. These are current-mode circuits that can be made using transistors that obey an exponential current-voltage characteristic—this includes bipolar junction transistors (BJTs) and CMOS transistors in weak inversion.
The subthreshold slope is a feature of a MOSFET's current–voltage characteristic.. In the subthreshold region, the drain current behaviour—though being controlled by the gate terminal—is similar to the exponentially decreasing current of a forward biased diode.
CMOS inverter (a NOT logic gate). Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss ", / s iː m ɑː s /, /-ɒ s /) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. [1]
Listed are many semiconductor scale examples for various metal–oxide–semiconductor field-effect transistor (MOSFET, or MOS transistor) semiconductor manufacturing process nodes. Timeline of MOSFET demonstrations
A CMOS transistor NAND element. V dd denotes positive voltage.. In CMOS logic, if both of the A and B inputs are high, then both the NMOS transistors (bottom half of the diagram) will conduct, neither of the PMOS transistors (top half) will conduct, and a conductive path will be established between the output and Vss (ground), bringing the output low.
In this model the three terminal transistor is considered to be a two port network, one of its terminals being common to both ports. The [h] parameters are quite different depending on which terminal is chosen as the common one. The most important parameter for transistors is usually the forward current gain, h 21, in the common emitter ...
In a given technology node, such as the 90-nm CMOS process, the threshold voltage depends on the choice of oxide and on oxide thickness. Using the body formulas above, V T N {\displaystyle V_{TN}} is directly proportional to γ {\displaystyle \gamma } , and t O X {\displaystyle t_{OX}} , which is the parameter for oxide thickness.
In high performance CMOS (complementary metal–oxide–semiconductor) amplifier circuits, transistors are not only used to amplify the signal but are also used as active loads to achieve higher gain and output swing in comparison with resistive loads. [1] [2] [3] CMOS technology was introduced primarily for digital circuit design.