Search results
Results from the WOW.Com Content Network
A memristor (/ ˈ m ɛ m r ɪ s t ər /; a portmanteau of memory resistor) is a non-linear two-terminal electrical component relating electric charge and magnetic flux linkage.It was described and named in 1971 by Leon Chua, completing a theoretical quartet of fundamental electrical components which also comprises the resistor, capacitor and inductor.
While the memristor is defined in terms of a two-terminal circuit element, there was an implementation of a three-terminal device called a memistor developed by Bernard Widrow in 1960. Memistors formed basic components of a neural network architecture called ADALINE developed by Widrow. [1] [2] The memistor was also used in MADALINE.
A memristor is a resistive device whose resistance changes as a function of the history of the applied voltage or current. A physical realization of the memristor was introduced in the Nature paper by Strukov and collaborators while studying titanium dioxide junctions, with a resistance experimentally observed to change approximately in ...
It is a combination of the memristor and transistor technology. [2] This technology is different from the 1T-1R approach since the devices are merged into one single entity. Multiple memristors can be embedded with a single transistor, enabling it to more accurately model a neuron with its multiple synaptic connections.
A few years after HP’s re-discovery of the Memristor, [34] the newly appointed CTO of HP, Martin Fink, created a HP Labs project to build a computer system based on memristor to tackle the slowing of Moore's law. He announced the project at HP’s Discover event in the summer of 2014. [35]
This article lists American military electronic instruments/systems along with brief descriptions. This list specifically identifies electronic devices which are assigned designations according to the Joint Electronics Type Designation System, beginning with the AN/ prefix. They are grouped below by the first designation letter following this ...
Spin-transfer torque can be used to flip the active elements in magnetic random-access memory. Spin-transfer torque magnetic random-access memory (STT-RAM or STT-MRAM) is a non-volatile memory with near-zero leakage power consumption which is a major advantage over charge-based memories such as SRAM and DRAM.
A leak from Fandom's Community Council was posted to Reddit's /r/Wikia subreddit in August 2018, confirming that Fandom would be migrating all wikis from the wikia.com domain, to fandom.com in early 2019, as part of a push for greater adoption of Fandom's wiki-specific applications on both iOS and Android's app ecosystems. The post was later ...