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SCR 4-layer (p-n-p-n) diagram. A silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current-controlling device.The name "silicon controlled rectifier" is General Electric's trade name for a type of thyristor.
Bridge rectifier (four diodes in a package) often changed to "D" for diode BT, BAT: Battery or battery holder: often shortened to "B" C: Capacitor: CB: Circuit breaker: CN: Capacitor network: may be simplified to "C" for capacitor D, CR: Diode (all types, including LED), thyristor "D" is preferred for various types of diodes DL: Delay line: DN ...
High voltages inputted to every OR gate are reduced by V F (~0.6 V in silicon, ~0.3 V in germanium), while low voltages inputted to every AND gate are raised by V F. Source resistance A voltage source's output resistance and the subsequent gate's pull-up/down resistor form a voltage divider that weakens voltage levels. This decreases high ...
Band diagram for metal-semiconductor junction at zero bias (equilibrium). Shown is the graphical definition of the Schottky barrier height, Φ B, for an n-type semiconductor as the difference between the interfacial conduction band edge E C and Fermi level E F.
Common circuit diagram symbols (US ANSI symbols) An electronic symbol is a pictogram used to represent various electrical and electronic devices or functions, such as wires, batteries, resistors, and transistors, in a schematic diagram of an electrical or electronic circuit. These symbols are largely standardized internationally today, but may ...
The first letter represents the semiconductor material used for the component (A = germanium and B = silicon) and the second letter represents the general function of the part (for diodes, A = low-power/signal, B = variable capacitance, X = multiplier, Y = rectifier and Z = voltage reference); for example:
A rectifier used in high-voltage direct current (HVDC) power transmission systems and industrial processing between about 1909 to 1975 is a mercury-arc rectifier or mercury-arc valve. The device is enclosed in a bulbous glass vessel or large metal tub.
Size comparison of BJT transistor packages, from left to right: SOT-23, TO-92, TO-126, TO-3 3D model of TO-3 package. In electronics, TO-3 is a designation for a standardized metal semiconductor package used for power semiconductors, including transistors, silicon controlled rectifiers, and, integrated circuits.