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In a diode model two diodes are connected back-to-back to make a PNP or NPN bipolar junction transistor (BJT) equivalent. This model is theoretical and qualitative. This model is theoretical and qualitative.
The Shockley ideal diode equation or the diode law (named after the bipolar junction transistor co-inventor William Bradford Shockley) models the exponential current–voltage (I–V) relationship of diodes in moderate forward or reverse bias. The article Shockley diode equation provides details.
A brand of transient voltage suppression diode. transistor A three terminal solid state device used as an amplifier or switch. transmission The process of getting a signal from one point to another. transmission line An arrangement of conductors for movement of electric power; used from DC to upper radio frequencies. transmission system operator
The strength of the depletion zone electric field increases as the reverse-bias voltage increases. Once the electric field intensity increases beyond a critical level, the p–n junction depletion zone breaks down and current begins to flow, usually by either the Zener or the avalanche breakdown processes. Both of these breakdown processes are ...
A diode-connected transistor is a method of creating a two-terminal rectifying device (a diode) out of a three-terminal transistor. A characteristic of diode-connected transistors is that they are always in the saturation region for metal–oxide–semiconductor field-effect transistors (MOSFETs) and junction-gate field-effect transistors ...
When forward-biased, a Schottky diode's voltage drop 0.25 V is much less than a standard silicon diode's 0.6 V. In a standard saturated transistor, the base-to-collector voltage is 0.6 V. In a Schottky transistor, the Schottky diode shunts current from the base into the collector before the transistor goes into saturation.
Breakdown voltage is a characteristic of an insulator that defines the maximum voltage difference that can be applied across the material before the insulator conducts. In solid insulating materials, this usually [citation needed] creates a weakened path within the material by creating permanent molecular or physical changes by the sudden current.
A transient-voltage-suppression diode can respond to over-voltages faster than other common over-voltage protection components such as varistors or gas discharge tubes. The actual clamping occurs in roughly one picosecond , but in a practical circuit the inductance of the wires leading to the device imposes a higher limit.
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