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  2. Drypoint - Wikipedia

    en.wikipedia.org/wiki/Drypoint

    A larger burr, formed by a steep angle of the tool, will hold a lot of ink, producing a characteristically soft, dense line that differentiates drypoint from other intaglio methods such as etching or engraving which produce a smooth, hard-edged line. The size or characteristics of the burr usually depend not on how much pressure is applied, but ...

  3. Etching (microfabrication) - Wikipedia

    en.wikipedia.org/wiki/Etching_(microfabrication)

    Etching is a critically important process module in fabrication, and every wafer undergoes many etching steps before it is complete. For many etch steps, part of the wafer is protected from the etchant by a "masking" material which resists etching. In some cases, the masking material is a photoresist which has been patterned using photolithography.

  4. Dry etching - Wikipedia

    en.wikipedia.org/wiki/Dry_etching

    Dry etching refers to the removal of material, typically a masked pattern of semiconductor material, by exposing the material to a bombardment of ions (usually a plasma of reactive gases such as fluorocarbons, oxygen, chlorine, boron trichloride; sometimes with addition of nitrogen, argon, helium and other gases) that dislodge portions of the material from the exposed surface.

  5. Intaglio (printmaking) - Wikipedia

    en.wikipedia.org/wiki/Intaglio_(printmaking)

    In intaglio printing, the lines to be printed are cut into a metal (e.g. copper) plate by means either of a cutting tool called a burin, held in the hand – in which case the process is called engraving; or through the corrosive action of acid – in which case the process is known as etching.

  6. Reactive-ion etching - Wikipedia

    en.wikipedia.org/wiki/Reactive-ion_etching

    A reactive-ion etching setup in a laboratory cleanroom. Reactive-ion etching (RIE) is an etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than wet etching. RIE uses chemically reactive plasma to remove material deposited on wafers.

  7. Deep reactive-ion etching - Wikipedia

    en.wikipedia.org/wiki/Deep_reactive-ion_etching

    To etch through a 0.5 mm silicon wafer, for example, 100–1000 etch/deposit steps are needed. The two-phase process causes the sidewalls to undulate with an amplitude of about 100–500 nm . The cycle time can be adjusted: short cycles yield smoother walls, and long cycles yield a higher etch rate.

  8. Etching - Wikipedia

    en.wikipedia.org/wiki/Etching

    This process is called aquatint, and allows for the creation of tones, shadows, and solid areas of color. The design is then drawn (in reverse) with an etching-needle or échoppe. An "echoppe" point can be made from an ordinary tempered steel etching needle, by grinding the point back on a carborundum stone, at a 45–60 degree angle.

  9. Surface micromachining - Wikipedia

    en.wikipedia.org/wiki/Surface_micromachining

    Micro-machining starts with a silicon wafer or other substrate upon which new layers are grown. These layers are selectively etched by photo-lithography; either a wet etch involving an acid, or a dry etch involving an ionized gas (or plasma). Dry etching can combine chemical etching with physical etching or ion bombardment. Surface micro ...