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Memory timings or RAM timings describe the timing information of a memory module or the onboard LPDDRx. Due to the inherent qualities of VLSI and microelectronics, memory chips require time to fully execute commands. Executing commands too quickly will result in data corruption and results in system instability.
The purpose of overclocking is to increase the operating speed of a given component. [3] Normally, on modern systems, the target of overclocking is increasing the performance of a major chip or subsystem, such as the main processor or graphics controller, but other components, such as system memory or system buses (generally on the motherboard), are commonly involved.
To keep running overclocked CPU at 2.5 GHz or even at higher speeds (by increasing FSB) we need to slow down memory clock so as to achieve a stable system. For this if we decrease DRAM:FSB ratio to say 4:5 then resulting memory clock speed is (4/5) × 250 MHz = 200 MHz resulting effective clock speed of 400 MHz on DDR-400.
The article author describes the MRC as "One of the most important aspects of the BIOS for an Intel board" and the reason why "one [board might be] a brilliant overclocker and another [is] as stable as a plate of jelly on a bouncy castle"; adding that "When you're overclocking, you're literally running clocks faster than normal. Working out the ...
[9] [10] On November 15, 2018, SK Hynix announced completion of its first DDR5 RAM chip; running at 5.2 GT/s at 1.1 V. [11] In February 2019, SK Hynix announced a 6.4 GT/s chip, the highest speed specified by the preliminary DDR5 standard. [12] The first production DDR5 DRAM chip was officially launched by SK Hynix on October 6, 2020. [13] [14]
DDR3 SDRAM is neither forward nor backward compatible with any earlier type of random-access memory (RAM) because of different signaling voltages, timings, and other factors. DDR3 is a DRAM interface specification. The actual DRAM arrays that store the data are similar to earlier types, with similar performance.
Normally, there is a performance penalty for using registered memory. Each read or write is buffered for one cycle between the memory bus and the DRAM, so the registered RAM can be thought of as running one clock cycle behind the equivalent unregistered DRAM.
1 megabit DRAMs with 70 ns latency on a 30-pin SIMM module. Modern DDR4 DIMMs have latencies under 15 ns. [1]Memory latency is the time (the latency) between initiating a request for a byte or word in memory until it is retrieved by a processor.