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The lower limit to this scaling process is an important point of comparison. In general, the technology that scales to the smallest cell size will end up being the least expensive per bit. In terms of construction, FeRAM and DRAM are similar, and can in general be built on similar lines at similar sizes.
Memory architecture describes the methods used to implement electronic computer data storage in a manner that is a combination of the fastest, most reliable, most durable, and least expensive way to store and retrieve information. Depending on the specific application, a compromise of one of these requirements may be necessary in order to ...
Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. [1] Developed in the mid-1980s, proponents have argued that magnetoresistive RAM will eventually surpass competing technologies to become a dominant or even universal memory . [ 2 ]
This is the least expensive, and fastest way of making mask ROM [3] as it only needs one mask with data, and has the lowest density of all mask ROM types as it is done at the metallization layer, [3] whose features can be relatively large in respect to other parts of the ROM. This is known as contact-programmed ROM.
Typically, non-volatile memory costs more, provides lower performance, or has a limited lifetime compared to volatile random access memory. Non-volatile data storage can be categorized into electrically addressed systems, for example, flash memory , and read-only memory ) and mechanically addressed systems ( hard disks , optical discs ...
The first bipolar semiconductor memory IC chip was the SP95 introduced by IBM in 1965. [9] While semiconductor memory offered improved performance over magnetic-core memory, it remained larger and more expensive and did not displace magnetic-core memory until the late 1960s. [9] [11]
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