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The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 (high voltage level) and reset to store a logic 0 (low voltage level). Its value is maintained/stored until it is changed by the set/reset process.
Examples of non-volatile memory are flash memory and ROM, PROM, EPROM, and EEPROM memory. Examples of volatile memory are dynamic random-access memory (DRAM) used for primary storage and static random-access memory (SRAM) used mainly for CPU cache. Most semiconductor memory is organized into memory cells each storing one bit (0 or 1).
For example a stick of RAM that has only 512 megabytes of transfer speed is too slow compared to a stick of RAM that has 16 gigabytes of transfer speeds. [5] Not only does the transfer speeds depend of how fast a RAM can process information, the type of stick of RAM depends as well. For example, there are sticks that can be used DDR3, DDR4 and ...
One of the two plates is a permanent magnet set to a particular polarity; the other plate's magnetization can be changed to match that of an external field to store memory. This configuration is known as a magnetic tunnel junction (MTJ) and is the simplest structure for an MRAM bit. A memory device is built from a grid of such "cells".
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm.
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Dual-ported RAM (DPRAM), also called dual-port RAM, is a type of random-access memory (RAM) that can be accessed via two different buses.. A simple dual-port RAM may allow only read access through one of the ports and write access through the other, in which case the same memory location cannot be accessed simultaneously through the ports since a write operation modifies the data and therefore ...