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A load line diagram, illustrating an operating point in the transistor's active region.. Biasing is the setting of the DC operating point of an electronic component. For bipolar junction transistors (BJTs), the operating point is defined as the steady-state DC collector-emitter voltage and the collector current with no input signal applied.
Steady state is reached (attained) after transient (initial, oscillating or turbulent) state has subsided. During steady state, a system is in relative stability. Steady state determination is an important topic, because many design specifications of electronic systems are given in terms of the steady-state characteristics. Periodic steady ...
Bipolar transistors, and particularly power transistors, have long base-storage times when they are driven into saturation; the base storage limits turn-off time in switching applications. A Baker clamp can prevent the transistor from heavily saturating, which reduces the amount of charge stored in the base and thus improves switching time.
Except at low collector-emitter voltages, the secondary breakdown limit restricts the collector current more than the steady-state power dissipation of the device. [3] Older power MOSFETs did not exhibit secondary breakdown, with their safe operating area being limited only by maximum current (the capacity of the bonding wires), maximum power ...
Class B vacuum tube amplifiers are usually operated with grid current (class B 2). The bias voltage source must have low resistance and be able to supply the grid current. [3] When tubes designed for class B are employed, the bias can be as little as zero. Class C amplifiers are biased negatively at a point well beyond plate current cutoff ...
Steady state determination is an important topic, because many design specifications of electronic systems are given in terms of the steady-state characteristics. Periodic steady-state solution is also a prerequisite for small signal dynamic modeling. Steady-state analysis is therefore an indispensable component of the design process.
The IGBT accounts for 27% of the power transistor market, second only to the power MOSFET (53%), and ahead of the RF amplifier (11%) and bipolar junction transistor (9%). [35] The IGBT is widely used in consumer electronics , industrial technology , the energy sector , aerospace electronic devices, and transportation .
In solid-state physics of semiconductors, carrier generation and carrier recombination are processes by which mobile charge carriers (electrons and electron holes) are created and eliminated. Carrier generation and recombination processes are fundamental to the operation of many optoelectronic semiconductor devices , such as photodiodes , light ...