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p–n junctions represent the simplest case of a semiconductor electronic device; a p-n junction by itself, when connected on both sides to a circuit, is a diode. More complex circuit components can be created by further combinations of p-type and n-type semiconductors; for example, the bipolar junction transistor (BJT) is a semiconductor in ...
A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, in the detection of ...
The p–n junction in any direct band gap material emits light when electric current flows through it. This is electroluminescence. Electrons cross from the n-region and recombine with the holes existing in the p-region.
A PN junction in forward bias mode, the depletion width decreases. Both p and n junctions are doped at a 1e15/cm3 doping level, leading to built-in potential of ~0.59V. Observe the different Quasi Fermi levels for conduction band and valence band in n and p regions (red curves). A depletion region forms instantaneously across a p–n junction.
The diffusion current and drift current together are described by the drift–diffusion equation. [1] It is necessary to consider the part of diffusion current when describing many semiconductor devices. For example, the current near the depletion region of a p–n junction is dominated by the diffusion current. Inside the depletion region ...
Shockley derives an equation for the voltage across a p-n junction in a long article published in 1949. [2] Later he gives a corresponding equation for current as a function of voltage under additional assumptions, which is the equation we call the Shockley ideal diode equation. [3]
Current–voltage characteristic of a p–n junction diode showing three regions: breakdown, reverse biased, forward biased. The exponential's "knee" is at V d. The leveling off region which occurs at larger forward currents is not shown. A diode's current–voltage characteristic can be approximated by four operating regions. From lower to ...
In a p-n junction diode, electrons and holes are the minority charge carriers in the p-region and the n-region, respectively. In an unbiased junction, due to the diffusion of charge carriers, the diffusion current, which flows from the p to n region, is exactly balanced by the equal and opposite drift current. [1]