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The first static induction thyristor was invented by Japanese engineer Jun-ichi Nishizawa in 1975. [5] It was capable of conducting large currents with a low forward bias and had a small turn-off time. It had a self controlled gate turn-off thyristor that was commercially available through Tokyo Electric Co. (now Toyo Engineering Corporation ...
A thyristor (/ θ aɪ ˈ r ɪ s t ər /, from a combination of Greek language θύρα, meaning "door" or "valve", and transistor [1]) is a solid-state semiconductor device which can be thought of as being a highly robust and switchable diode, allowing the passage of current in one direction but not the other, often under control of a gate electrode, that is used in high power applications ...
MOS composite static induction thyristor (CSMT or MCS) is a combination of a MOS transistor connected in cascode relation to the SI-thyristor. [1]The SI thyristor (SITh) unit has a gate to which a source of MOS transistor is connected through a voltage regulation element.
He is known for his electronic inventions since the 1950s, including the PIN diode, static induction transistor, static induction thyristor, SIT/SITh. His inventions contributed to the development of internet technology and the Information Age. [2] He was a professor at Sophia University. He is considered the "Father of Japanese Microelectronics".
SCR 4-layer (p-n-p-n) diagram. A silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current-controlling device.The name "silicon controlled rectifier" is General Electric's trade name for a type of thyristor.
[15] [16] The development of IGBT was characterized by the efforts to completely suppress the thyristor operation or the latch-up in the four-layer device because the latch-up caused the fatal device failure. IGBTs had, thus, been established when the complete suppression of the latch-up of the parasitic thyristor was achieved.
Thyristors. Silicon-controlled rectifier (SCR) – passes current only after triggered by a sufficient control voltage on its gate; TRIAC (TRIode for Alternating Current) – bidirectional SCR; Unijunction transistor (UJT) Programmable Unijunction transistor (PUT) SITh (static induction thyristor)
The static induction transistor (SIT) is a type of field-effect transistor (FET) capable of high-speed and high-power operation, with low distortion and low noise. [1] It is a vertical structure device with short multichannel. The device was originally known as a VFET, with V being short for vertical. [2]
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