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Avalanche breakdown (or the avalanche effect) is a phenomenon that can occur in both insulating and semiconducting materials. It is a form of electric current multiplication that can allow very large currents within materials which are otherwise good insulators. It is a type of electron avalanche.
Avalanche mode switching relies on avalanche multiplication of current flowing through the collector-base junction as a result of impact ionization of the atoms in the semiconductor crystal lattice. Avalanche breakdown in semiconductors has found application in switching circuits for two basic reasons
In electronics, an avalanche diode is a diode (made from silicon or other semiconductor) that is designed to experience avalanche breakdown at a specified reverse bias voltage. The junction of an avalanche diode is designed to prevent current concentration and resulting hot spots, so that the diode is undamaged by the breakdown.
The structure of the silicon APD. An avalanche photodiode (APD) is a highly sensitive type of photodiode, which in general are semiconductor diodes that convert light into electricity via interband excitation coupled with impact ionization.
SPADs are semiconductor devices that are based on a p–n junction that is reverse-biased at an operating voltage that exceeds the junction's breakdown voltage (). [3] " At this bias, the electric field is so high [higher than 3×10 5 V/cm] that a single charge carrier injected into the depletion layer can trigger a self-sustaining avalanche.
The device behaves as two diodes connected in series. A small leakage current flows. This is the reverse blocking mode. If the reverse voltage is increased, then at critical breakdown level, called the reverse breakdown voltage (V BR), an avalanche occurs at J1 and J3 and the reverse current increases rapidly. SCRs are available with reverse ...
A unidirectional device operates as a rectifier in the forward direction like any other avalanche diode, but is made and tested to handle very large peak currents. A bidirectional transient-voltage-suppression diode can be represented by two mutually opposing avalanche diodes in series with one another and connected in parallel with the circuit ...
An electron avalanche is a process in which a number of free electrons in a transmission medium are subjected to strong acceleration by an electric field and subsequently collide with other atoms of the medium, thereby ionizing them (impact ionization).
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