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Gallium nitride (Ga N) is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure .
Gallium reacts with ammonia at 1050 °C to form gallium nitride, GaN. Gallium also forms binary compounds with phosphorus, arsenic, and antimony: gallium phosphide (GaP), gallium arsenide (GaAs), and gallium antimonide (GaSb). These compounds have the same structure as ZnS, and have important semiconducting properties.
Sodium nitride and potassium nitride has been generated, but remains a laboratory curiosity. The nitrides of the alkaline earth metals that have the formula M 3 N 2 are however numerous. Examples include beryllium nitride (Be 3 N 2), magnesium nitride (Mg 3 N 2), calcium nitride (Ca 3 N 2), and strontium nitride (Sr 3 N 2). The nitrides of ...
The semiconductors gallium nitride and indium gallium nitride are used in blue and violet optoelectronic devices, mostly laser diodes and light-emitting diodes. For example, gallium nitride 405 nm diode lasers are used as a violet light source for higher-density Blu-ray Disc compact data disc drives. [74]
Gallium nitride [4] 1.9 ... which were calculated using the formula above based on reasonable assumptions about valence, , and with mass ...
This is a list of CAS numbers by chemical formulas and chemical compounds, indexed by formula.The CAS number is a unique number applied to a specific chemical by the Chemical Abstracts Service (CAS).This list complements alternative listings to be found at list of inorganic compounds and glossary of chemical formulae
Gallium antimonide – GaSb; Gallium arsenide – GaAs; Gallium(III) fluoride – GaF 3; Gallium trichloride – GaCl 3; Gallium nitride – GaN; Gallium phosphide – GaP; Gallium(II) sulfide – GaS; Gallium(III) sulfide – Ga 2 S 3
Indium gallium nitride is the light-emitting layer in modern blue and green LEDs and often grown on a GaN buffer on a transparent substrate as, e.g. sapphire or silicon carbide. It has a high heat capacity and its sensitivity to ionizing radiation is low (like other group III nitrides ), making it also a potentially suitable material for solar ...