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  2. Wafer bond characterization - Wikipedia

    en.wikipedia.org/wiki/Wafer_bond_characterization

    A development in bond strength testing of adhesively bonded composite structures is laser bond inspection (LBI). LBI provides a relative strength quotient derived from the fluence level of the laser energy delivered onto the material for the strength test compared to the strength of bonds previously mechanically tested at the same laser fluence.

  3. Metal ions in aqueous solution - Wikipedia

    en.wikipedia.org/wiki/Metal_ions_in_aqueous_solution

    The strength of the bonds between the metal ion and water molecules in the primary solvation shell increases with the electrical charge, z, on the metal ion and decreases as its ionic radius, r, increases. Aqua ions are subject to hydrolysis. The logarithm of the first hydrolysis constant is proportional to z 2 /r for most aqua ions.

  4. Magnesium oxide - Wikipedia

    en.wikipedia.org/wiki/Magnesium_oxide

    Magnesium oxide (Mg O), or magnesia, is a white hygroscopic solid mineral that occurs naturally as periclase and is a source of magnesium (see also oxide). It has an empirical formula of MgO and consists of a lattice of Mg 2+ ions and O 2− ions held together by ionic bonding .

  5. Plasma-activated bonding - Wikipedia

    en.wikipedia.org/wiki/Plasma-activated_bonding

    The decrease of temperature is based on the increase of bonding strength using plasma activation on clean wafer surfaces. Further, the increase is caused by elevation in amount of Si-OH groups, removal of contaminants on the wafer surface, the enhancement of viscous flow of the surface layer and the enhanced diffusivity of water and gas trapped at the interface. [2]

  6. Metal oxide adhesion - Wikipedia

    en.wikipedia.org/wiki/Metal_oxide_adhesion

    A graph depicting the strength of forces as the stress required to debond materials increases. The positive trend seen shows as bonding increases, the force and stress required to debond the material does as well. The strength of the bond between the oxide and metal for the same nominal contact area can range from Pa to GPa stresses.

  7. Intramolecular force - Wikipedia

    en.wikipedia.org/wiki/Intramolecular_force

    The bond length, or the minimum separating distance between two atoms participating in bond formation, is determined by their repulsive and attractive forces along the internuclear direction. [3] As the two atoms get closer and closer, the positively charged nuclei repel, creating a force that attempts to push the atoms apart.

  8. Direct bonding - Wikipedia

    en.wikipedia.org/wiki/Direct_bonding

    The wafers are covered with water molecules so the bonding happens between chemisorbed water molecules on the opposing wafer surfaces. In consequence a significant fraction of Si-OH (silanol) groups start to polymerize at room temperature forming Si-O-Si and water and a sufficient bonding strength for handling the wafer stack is assured.

  9. Hydride - Wikipedia

    en.wikipedia.org/wiki/Hydride

    These hydrides are formed by all the true non-metals (except zero group elements) and the elements like Al, Ga, Sn, Pb, Bi, Po, etc., which are normally metallic in nature, i.e., this class includes the hydrides of p-block elements. In these substances the hydride bond is formally a covalent bond much like the bond made by a proton in a weak ...