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In the 1990s, interest grew in the use of tantalum oxide as a high-k dielectric for DRAM capacitor applications. [22] [23] It is used in on-chip metal-insulator-metal capacitors for high frequency CMOS integrated circuits. Tantalum oxide may have applications as the charge trapping layer for non-volatile memories.
Characteristics of the different oxide layers in tantalum and niobium electrolytic capacitors [5] Anode-material Dielectric Relative permittivity Oxide structure Breakdown voltage (V/μm) Dielectric layer thickness (nm/V) Tantalum: Tantalum pentoxide, Ta 2 O 5: 27: Amorphous: 625: 1.7 Niobium or Niobium oxide: Niobium pentoxide, Nb 2 O 5: 41 ...
The relative permittivity (in older texts, dielectric constant) is the permittivity of a material expressed as a ratio with the electric permittivity of a vacuum. A dielectric is an insulating material, and the dielectric constant of an insulator measures the ability of the insulator to store electric energy in an electrical field.
In the semiconductor industry, the term high-κ dielectric refers to a material with a high dielectric constant (κ, kappa), as compared to silicon dioxide.High-κ dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric or another dielectric layer of a device.
The self-discharge constant is an important parameter for the insulation of the dielectric between the electrodes of ceramic and film capacitors. For example, a capacitor can be used as the time-determining component for time relays or for storing a voltage value as in a sample and hold circuits or operational amplifiers .
Characteristics of the different oxide layers in aluminium, tantalum and niobium electrolytic capacitors [19] [20] Anode-material Dielectric Oxide structure Relative permittivity Breakdown voltage (V/μm) Electric layer thickness (nm/V) Tantalum: Tantalum pentoxide Ta 2 O 5: amorphous: 27: 625: 1.6 Aluminum: Aluminium oxide Al 2 O 3: amorphous ...
Characteristics of the different oxide layers in aluminium, tantalum and niobium electrolytic capacitors [1] [2] Anode-material Dielectric Oxide structure Relative permittivity Breakdown voltage (V/μm) Electric layer thickness (nm/V) aluminium: Aluminium oxide Al 2 O 3: amorphous: 9.6: 710: 1.4 crystalline: 11.6…14.2 [3] 800...1000 [4] 1.25 ...
Its relative dielectric constant is ~22 and it has a thermal expansion coefficient of 8~10×10 −6 /K. The thermal conductivity of LSAT is 5.1 Wm −1 K −1. [2] [3] LSAT's (cubic) lattice parameter of 3.868 Å makes it compatible for the growth of a wide range of perovskite oxides with a relatively low strain. [citation needed]