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The Fermi level does not necessarily correspond to an actual energy level (in an insulator the Fermi level lies in the band gap), nor does it require the existence of a band structure. Nonetheless, the Fermi level is a precisely defined thermodynamic quantity, and differences in Fermi level can be measured simply with a voltmeter.
The Fermi level is also usually indicated in the diagram. Sometimes the intrinsic Fermi level, E i, which is the Fermi level in the absence of doping, is shown. These diagrams are useful in explaining the operation of many kinds of semiconductor devices.
In the case of a degenerate semiconductor, an electron from the top of the valence band can only be excited into conduction band above the Fermi level (which now lies in conduction band) since all the states below the Fermi level are occupied states. Pauli's exclusion principle forbids excitation into these occupied states. Thus we observe an ...
E i: The intrinsic Fermi level may be included in a semiconductor, to show where the Fermi level would have to be for the material to be neutrally doped (i.e., an equal number of mobile electrons and holes). E imp: Impurity energy level. Many defects and dopants add states inside the band gap of a semiconductor or insulator. It can be useful to ...
In insulators and semiconductors the Fermi level is inside a band gap; however, in semiconductors the bands are near enough to the Fermi level to be thermally populated with electrons or holes. "intrin." indicates intrinsic semiconductors
µ is the total chemical potential of electrons, or Fermi level (in semiconductor physics, this quantity is more often denoted E F). The Fermi level of a solid is directly related to the voltage on that solid, as measured with a voltmeter. Conventionally, in band structure plots the Fermi level is taken to be the zero of energy (an arbitrary ...
A quasi Fermi level is a term used in quantum mechanics and especially in solid state physics for the Fermi level (chemical potential of electrons) that describes the population of electrons separately in the conduction band and valence band, when their populations are displaced from equilibrium.
The conduction of current of intrinsic semiconductor is enabled purely by electron excitation across the band-gap, which is usually small at room temperature except for narrow-bandgap semiconductors, like Hg 0.8 Cd 0.2 Te. The conductivity of a semiconductor can be modeled in terms of the band theory of solids.