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Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory .
Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory ; data is lost when power is removed.
1989 — Pohm and Daughton left Honeywell to form Nonvolatile Electronics, Inc. (later renamed to NVE Corp.) sublicensing the MRAM technology they have created. [ 24 ] 1995 — Motorola (later to become Freescale Semiconductor , and subsequently NXP Semiconductors ) initiates work on MRAM development
Website www .patriotmemory .com Patriot Memory is an American designer and manufacturer of PC-based USB flash drives, memory modules, solid state drives and gaming peripherals. [ 1 ]
Early generator interlock kits consisted of two sliding steel or plastic (depending on the brand) plates held together by three bolts and installed on the front cover of the home's breaker panel, however, some models made by Eaton (formerly Cutler-Hammer) and Siemens for panels manufactured by them install on the adjacent circuit breakers themselves and consist of a sliding arm for breakers ...
Rambus Inc. is an American technology company that designs, develops and licenses chip interface technologies and architectures that are used in digital electronics products. The company, founded in 1990, is well known for inventing RDRAM and for its intellectual property-based litigation following the introduction of DDR-SDRAM memory. [2] [3] [4]
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