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Siltronic AG is a manufacturer of wafers made of hyperpure silicon, the basis for modern micro- and nanotechnology. The Munich-based company is one of the world's leading manufacturers of wafers for the semiconductor industry.
The deal to acquire Siltronic failed in 2022 when the German Government failed to clear the deal by the required deadline. [5] After their acquisition attempt to acquire Siltronic failed GlobalWafers announced that they would be putting the more than 3b USD earmarked for the acquisition towards capacity expansion. [6] [7]
Companies that convert raw silicons to wafer (electronics). Pages in category "Silicon wafer producers" The following 17 pages are in this category, out of 17 total.
In electronics, a wafer (also called a slice or substrate) [1] is a thin slice of semiconductor, such as a crystalline silicon (c-Si, silicium), used for the fabrication of integrated circuits and, in photovoltaics, to manufacture solar cells. The wafer serves as the substrate for microelectronic devices built in and upon
In 1978, Wacker Siltronic Corporation was founded in Portland, Oregon [8] and in 1983 expansion of the company began in Asia with the addition of facilities there. [3] In 1987, a wholly-owned subsidiary of Wacker Chemie AG, DRAWIN Vertriebs GmbH was founded in Ottobrunn , Upper Bavaria.
High purity silicon in different grades of purity is used for growing silicon ingots, which are sliced to wafers in a process called wafering. Compositionally pure polycrystalline silicon wafers are useful for photovoltaics. Dislocation-free and extremely flat single-crystal silicon wafers are required in the manufacture of computer chips.
As of 2017, X-Fab has six wafer plants around the world, with production capacity of 9,4000 200-mm sized wafers, ranging from 800 nm process to 130 nm process: [4] Erfurt, Germany - producing CMOS semiconductors and microelectromechanical systems (MEMS devices) from 200-mm wafers [15] Dresden, Germany - producing CMOS semiconductors from 200-mm ...
2-based SOI wafers can be produced by several methods: SIMOX - Separation by IMplantation of OXygen – uses an oxygen ion beam implantation process followed by high temperature annealing to create a buried SiO 2 layer. [14] [15] Wafer bonding [16] [17] – the insulating layer is formed by directly bonding oxidized silicon with a second ...
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