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The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n–p–n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p ...
The gate in a conventional (field-effect) transistor determines the conductance between the source and drain electrode by controlling the density of charge carriers between them, whereas the gate in a single-molecule transistor controls the possibility of a single electron to jump on and off the molecule by modifying the energy of the molecular ...
Block diagram of a basic class-D amplifier. Note: For clarity, signal periods are not shown to scale. A class-D amplifier or switching amplifier is an electronic amplifier in which the amplifying devices (transistors, usually MOSFETs) operate as electronic switches, and not as linear gain devices as in other amplifiers.
In contrast, a unipolar transistor, such as a field-effect transistor (FET), uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current between the remaining two terminals, making the device capable of amplification or switching.
The common base current gain (or α) of a point-contact transistor is usually around 2 to 3, [4] whereas α of bipolar junction transistor (BJT) cannot exceed 1. The common emitter current gain (or β) of a point-contact transistor does not usually exceed 1, [4] whereas β of a BJT is typically between 20 and 200. Negative differential ...
Amplifiers operate in the active region, where both device current and voltage are non-zero. Consequently power is continually dissipated and its design is dominated by the need to remove excess heat from the semiconductor device. Power amplifier devices can often be recognized by the heat sink used to mount the devices. Multiple types of power ...
In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device.
The organic electrochemical transistor (OECT) is an organic electronic device which functions like a transistor. The current flowing through the device is controlled by the exchange of ions between an electrolyte and the OECT channel composed of an organic conductor or semiconductor . [ 1 ]