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  2. MB Bank - Wikipedia

    en.wikipedia.org/wiki/MB_Bank

    MB Bank was established on November 4th, 1994, with initial charter capital of 500 billion VND. [6] [7] In 2000, MB Bank established Thang Long Securities Company Limited (now Military Commercial Joint Stock Bank Securities Corporation - MBS) and Military Commercial Joint Stock Bank's Debt Management and Asset Exploitation Company (MBAMC).

  3. DDR SDRAM - Wikipedia

    en.wikipedia.org/wiki/DDR_SDRAM

    The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as 16 banks, 4 bank groups with 4 banks for each bank group for ×4/×8 and 8 banks, 2 bank groups with 4 banks for each bank group for ×16 DRAM. The DDR4 SDRAM uses an 8n prefetch architecture to achieve high-speed operation.

  4. DDR3 SDRAM - Wikipedia

    en.wikipedia.org/wiki/DDR3_SDRAM

    With data being transferred 64 bits at a time per memory module, DDR3 SDRAM gives a transfer rate of (memory clock rate) × 4 (for bus clock multiplier) × 2 (for data rate) × 64 (number of bits transferred) / 8 (number of bits in a byte). Thus with a memory clock frequency of 100 MHz, DDR3 SDRAM gives a maximum transfer rate of 6400 MB/s.

  5. Multi-channel memory architecture - Wikipedia

    en.wikipedia.org/wiki/Multi-channel_memory...

    A matched pair of memory modules may usually be placed in the first bank of each channel, and a different-capacity pair of modules in the second bank. [7] Modules rated at different speeds can be run in dual-channel mode, although the motherboard will then run all memory modules at the speed of the slowest module.

  6. GDDR6 SDRAM - Wikipedia

    en.wikipedia.org/wiki/GDDR6_SDRAM

    At Hot Chips 2016, Samsung announced GDDR6 as the successor of GDDR5X. [5] [6] Samsung later announced that the first products would be 16 Gbit/s, 1.35 V chips.[7] [8] In January 2018, Samsung began mass production of 16 Gb (2 GB) GDDR6 chips, fabricated on a 10 nm class process and with a data rate of up to 18 Gbit/s per pin.

  7. Synchronous dynamic random-access memory - Wikipedia

    en.wikipedia.org/wiki/Synchronous_dynamic_random...

    A typical 512 Mbit SDRAM chip internally contains four independent 16 MB memory banks. Each bank is an array of 8,192 rows of 16,384 bits each. (2048 8-bit columns). A bank is either idle, active, or changing from one to the other. [6] The active command activates an idle bank. It presents a two-bit bank address (BA0–BA1) and a 13-bit row ...

  8. List of interface bit rates - Wikipedia

    en.wikipedia.org/wiki/List_of_interface_bit_rates

    4.75/1.125 MB/s: 1997 ... 12 GB/s: 2007 InfiniBand EDR 4 ... DDR3 memory is installed in single-, dual-, tri-, and quad-channel configurations. Bit rates of multi ...

  9. Memory bank - Wikipedia

    en.wikipedia.org/wiki/Memory_bank

    A memory bank is a part of cache memory that is addressed consecutively in the total set of memory banks, i.e., when data item a(n) is stored in bank b, data item a(n + 1) is stored in bank b + 1. Cache memory is divided in banks to evade the effects of the bank cycle time (see above) [=> missing "bank cycle" definition, above]. When data is ...