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Charge carrier density, also known as carrier concentration, denotes the number of charge carriers per volume. In SI units, it is measured in m −3. As with any density, in principle it can depend on position. However, usually carrier concentration is given as a single number, and represents the average carrier density over the whole material.
Free carrier concentration is the concentration of free carriers in a doped semiconductor. It is similar to the carrier concentration in a metal and for the purposes of calculating currents or drift velocities can be used in the same way. Free carriers are electrons that have been introduced into the conduction band (valence band) by doping ...
Crystalline solids and molecular solids are two opposite extreme cases of materials that exhibit substantially different transport mechanisms. While in atomic solids transport is intra-molecular, also known as band transport, in molecular solids the transport is inter-molecular, also known as hopping transport.
N dop is the net density of dopants (either donors or acceptors). When doping profiles exceed the Debye length, majority carriers no longer behave according to the distribution of the dopants. Instead, a measure of the profile of the doping gradients provides an "effective" profile that better matches the profile of the majority carrier density.
The optical Hall effect is an emerging technique for measuring the free charge carrier density, effective mass and mobility parameters in semiconductors. The optical Hall effect measures the analogue of the quasi-static electric-field-induced electrical Hall effect at optical frequencies in conductive and complex layered materials.
In solid-state physics of semiconductors, carrier generation and carrier recombination are processes by which mobile charge carriers (electrons and electron holes) are created and eliminated. Carrier generation and recombination processes are fundamental to the operation of many optoelectronic semiconductor devices , such as photodiodes , light ...
Since the electron charge e is known and also the Planck constant h, one can derive the electron density n of a sample from this plot. [3] Shubnikov–De Haas oscillations are observed in highly doped Bi 2 Se 3. [4] Fig 3 shows the reciprocal magnetic flux density 1/B i of the 10th to 14th minima of a Bi 2 Se 3 sample.
A chart of Minority Carrier Lifetime vs. Minority Carrier Density used in Photoconductance decay measurement of a monocrystalline silicon wafer passivated with an amorphous silicon thin layer. The difference in dark and excited photoconductivity Δ σ {\displaystyle \Delta \sigma } of the wafer is typically measured through monitoring of the ...