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Amorphous silicon (a-Si) is the non-crystalline form of silicon used for solar cells and thin-film transistors in LCDs.. Used as semiconductor material for a-Si solar cells, or thin-film silicon solar cells, it is deposited in thin films onto a variety of flexible substrates, such as glass, metal and plastic.
Polycrystalline silicon (p-Si) is a pure and conductive form of the element composed of many crystallites, or grains of highly ordered crystal lattice.In 1984, studies showed that amorphous silicon (a-Si) is an excellent precursor for forming p-Si films with stable structures and low surface roughness. [2]
Polycrystalline silicon, or multicrystalline silicon, also called polysilicon, poly-Si, or mc-Si, is a high purity, polycrystalline form of silicon, used as a raw material by the solar photovoltaic and electronics industry. Polysilicon is produced from metallurgical grade silicon by a chemical purification process, called the Siemens process.
Amorphous steel is limited to foils of about 50 μm thickness. The mechanical properties of amorphous steel make stamping laminations for electric motors difficult. Since amorphous ribbon can be cast to any specific width under roughly 13 inches and can be sheared with relative ease, it is a suitable material for wound electrical transformer cores.
Directly behind the scintillator layer is an amorphous silicon detector array manufactured using a process very similar to that used to make LCD televisions and computer monitors. Like a TFT-LCD display, millions of roughly 0.2 mm pixels each containing a thin-film transistor form a grid patterned in amorphous silicon on the glass substrate. [1]
As quoted in an online version of: David R. Lide (ed), CRC Handbook of Chemistry and Physics, 84th Edition.CRC Press. Boca Raton, Florida, 2003; Section 4, Properties of the Elements and Inorganic Compounds; Physical Properties of the Rare Earth Metals
Because it is naturally abundant and well understood, amorphous or polycrystalline silicon were (and still are) used as the semiconductor layer. However, because of the low mobility of amorphous silicon [ 2 ] and the large device-to-device variations found in polycrystalline silicon, [ 3 ] [ 4 ] [ 5 ] other materials have been studied for use ...
The gate contact may be of polysilicon or metal, previously polysilicon was chosen over metal because the interfacing between polysilicon and gate oxide (SiO 2) was favorable. But the conductivity of the poly-silicon layer is very low and because of this low conductivity, the charge accumulation is low, leading to a delay in channel formation ...