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Simplified cross section of a planar NPN bipolar junction transistor. BJTs consists of three differently doped semiconductor regions: the emitter region, the base region and the collector region. These regions are, respectively, p type, n type and p type in a PNP transistor, and n type, p type and n type in an NPN transistor.
For an NPN open emitter output, the collector is connected to the positive voltage rail, so the emitter outputs a high voltage when the transistor is on and is hi-Z when off. For a PNP open emitter output, the collector is connected to the low voltage supply, so the emitter outputs a low voltage when the transistor is on and is hi-Z when off.
The most common BJTs are NPN and PNP type. NPN transistors have two layers of n-type semiconductors sandwiching a p-type semiconductor. PNP transistors have two layers of p-type semiconductors sandwiching an n-type semiconductor. Field-effect transistors (FET) are another type of transistor which amplify current implementing extrinsic ...
The passive-pixel sensor (PPS) is a type of photodiode array. It was the precursor to the active-pixel sensor (APS). [20] A passive-pixel sensor consists of passive pixels which are read out without amplification, with each pixel consisting of a photodiode and a MOSFET switch. [24]
The 2N3906 is a commonly used PNP bipolar junction transistor intended for general purpose low-power amplifying or switching applications. [1] [2] It is designed for low electric current and power and medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3904 NPN transistor. [3]
The 2N3904 is a common NPN bipolar junction transistor used for general-purpose low-power amplifying or switching applications. [1] [2] [3] It is designed for low current and power, medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3906 PNP transistor. Both types were registered by Motorola Semiconductor in ...
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