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  2. Ion milling machine - Wikipedia

    en.wikipedia.org/wiki/Ion_milling_machine

    Ion milling is a specialized physical etching technique that is a crucial step in the preparation of material analysis techniques. After a specimen goes through ion milling, the surface becomes much smoother and more defined, which allows scientists to study the material much easier.

  3. Molecular-beam epitaxy - Wikipedia

    en.wikipedia.org/wiki/Molecular-beam_epitaxy

    Molecular beam epitaxy system Veeco Gen II at the FZU – Institute of Physics of the Czech Academy of Sciences. The system is designed for growth of monocrystalline semiconductors, semiconducting heterostructures, materials for spintronics and other compound material systems containing Al, Ga, As, P, Mn, Cu, Si and C.

  4. Veeco - Wikipedia

    en.wikipedia.org/wiki/Veeco

    Veeco Instruments Inc. is a global capital equipment supplier, headquartered in the U.S., that designs and builds processing systems used in semiconductor and compound semiconductor manufacturing, data storage and scientific markets for applications such as advanced packaging, photonics, power electronics and display technologies.

  5. Veeco Introduces GENxplor Molecular Beam Epitaxy System

    www.aol.com/2013/08/19/veeco-introduces-genxplor...

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  6. Philips Innovation Services Qualifies Veeco PVD System for ...

    www.aol.com/news/2013-01-30-philips-innovation...

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  7. Focused ion beam - Wikipedia

    en.wikipedia.org/wiki/Focused_ion_beam

    Most widespread instruments are using liquid metal ion sources (LMIS), especially gallium ion sources. Ion sources based on elemental gold and iridium are also available. In a gallium LMIS, gallium metal is placed in contact with a tungsten needle, and heated gallium wets the tungsten and flows to the tip of the needle, where the opposing forces of surface tension and electric field form the ...

  8. Etching (microfabrication) - Wikipedia

    en.wikipedia.org/wiki/Etching_(microfabrication)

    Ion milling, or sputter etching, uses lower pressures, often as low as 10 −4 Torr (10 mPa). It bombards the wafer with energetic ions of noble gases, often Ar +, which knock atoms from the substrate by transferring momentum. Because the etching is performed by ions, which approach the wafer approximately from one direction, this process is ...

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