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Typical electron mobility at room temperature (300 K) in metals like gold, copper and silver is 30–50 cm 2 /(V⋅s). Carrier mobility in semiconductors is doping dependent. In silicon (Si) the electron mobility is of the order of 1,000, in germanium around 4,000, and in gallium arsenide up to 10,000 cm 2 /(V⋅s).
Pure silicon is an intrinsic semiconductor, which means that unlike metals, it conducts electron holes and electrons released from atoms by heat; silicon's electrical conductivity increases with higher temperatures. Pure silicon has too low a conductivity (i.e., too high a resistivity) to be used as a
The amount of impurity, or dopant, added to an intrinsic (pure) semiconductor varies its level of conductivity. [26] Doped semiconductors are referred to as extrinsic. [27] By adding impurity to the pure semiconductors, the electrical conductivity may be varied by factors of thousands or millions. [28]
Electrical conductivity of water samples is used as an indicator of how salt-free, ion-free, or impurity-free the sample is; the purer the water, the lower the conductivity (the higher the resistivity). Conductivity measurements in water are often reported as specific conductance, relative to the conductivity of pure water at 25 °C.
In solid-state physics, the valence band and conduction band are the bands closest to the Fermi level, and thus determine the electrical conductivity of the solid. In nonmetals, the valence band is the highest range of electron energies in which electrons are normally present at absolute zero temperature, while the conduction band is the lowest range of vacant electronic states.
Furthermore, lattice vibrations increase with temperature, which increases the effect of electron scattering. Additionally, the number of charge carriers within a semiconductor will increase, as more carriers have the energy required to cross the band-gap threshold and so conductivity of semiconductors also increases with increasing temperature ...
For example, doping pure silicon with a small amount of phosphorus will increase the carrier density of electrons, n. Then, since n > p, the doped silicon will be a n-type extrinsic semiconductor. Doping pure silicon with a small amount of boron will increase the carrier density of holes, so then p > n, and it will be a p-type extrinsic ...
It melts at 1414 °C. Silicon is a semiconductor with an electrical conductivity of 10 −4 S•cm −1 [287] and a band gap of about 1.11 eV. [281] When it melts, silicon becomes a reasonable metal [288] with an electrical conductivity of 1.0–1.3 × 10 4 S•cm −1, similar to that of liquid mercury. [289]