enow.com Web Search

Search results

  1. Results from the WOW.Com Content Network
  2. Epitaxy - Wikipedia

    en.wikipedia.org/wiki/Epitaxy

    Centrifugal liquid-phase epitaxy is used commercially to make thin layers of silicon, germanium, and gallium arsenide. [17] [18] Centrifugally formed film growth is a process used to form thin layers of materials by using a centrifuge. The process has been used to create silicon for thin-film solar cells [19] [20] and far-infrared ...

  3. Thermophotovoltaic energy conversion - Wikipedia

    en.wikipedia.org/wiki/Thermophotovoltaic_energy...

    This was for a device grown on a GaSb substrate by organometallic vapour phase epitaxy (OMVPE). Devices have been grown by molecular beam epitaxy (MBE) and liquid phase epitaxy (LPE). The internal quantum efficiencies (IQE) of these devices approach 90%, while devices grown by the other two techniques exceed 95%. [30]

  4. Single crystal - Wikipedia

    en.wikipedia.org/wiki/Single_crystal

    One of the most used single crystals is that of Silicon in the semiconductor industry. The four main production methods for semiconductor single crystals are from metallic solutions: liquid phase epitaxy (LPE), liquid phase electroepitaxy (LPEE), the traveling heater method (THM), and liquid phase diffusion (LPD). [13]

  5. Lateral epitaxial overgrowth and pendeo-epitaxy - Wikipedia

    en.wikipedia.org/wiki/Lateral_epitaxial...

    Conventional epitaxial growth techniques of GaN on SiC, sapphire and Si substrate are known to produce high density of structural defects, [15] [16] [17] mainly edge and screw dislocations and stacking faults, in the order of 10 9-10 10 cm-2. PE and LEO, the latter also referred to epitaxial lateral overgrowth (ELO), are known to enable two to ...

  6. Indium arsenide antimonide - Wikipedia

    en.wikipedia.org/wiki/Indium_arsenide_antimonide

    InAsSb films have been grown by molecular beam epitaxy (MBE), metalorganic vapor phase epitaxy (MOVPE) and liquid phase epitaxy (LPE) on gallium arsenide and gallium antimonide substrates. It is often incorporated into layered heterostructures with other III-V compounds. [citation needed]

  7. Liquid phase epitaxy - Wikipedia

    en.wikipedia.org/?title=Liquid_phase_epitaxy&...

    This page was last edited on 23 August 2007, at 11:52 (UTC).; Text is available under the Creative Commons Attribution-ShareAlike 4.0 License; additional terms may ...

  8. Laser-heated pedestal growth - Wikipedia

    en.wikipedia.org/wiki/Laser-heated_pedestal_growth

    The molten region melts impure solid at its forward edge and leaves a wake of purer material solidified behind it. This technique for growing crystals from the melt (liquid/solid phase transition) is used in materials research. [1] [2]

  9. Indium gallium arsenide - Wikipedia

    en.wikipedia.org/wiki/Indium_gallium_arsenide

    Single crystal material in thin-film form can be grown by epitaxy from the liquid-phase (LPE), vapour-phase (VPE), by molecular beam epitaxy (MBE), and by metalorganic chemical vapour deposition (MO-CVD). [5] Today, most commercial devices are produced by MO-CVD or by MBE.