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A memory-mapped file is a segment of virtual memory [1] that has been assigned a direct byte-for-byte correlation with some portion of a file or file-like resource. This resource is typically a file that is physically present on disk, but can also be a device, shared memory object, or other resource that an operating system can reference through a file descriptor.
[10] [11] While write transactions are globally serialized via a mutex, read-only transactions operate in parallel, including in the presence of a write transaction. They are entirely wait free except for the first read-only transaction on a thread. Each thread reading from a database gains ownership of an element in a shared memory array ...
Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a form of random-access memory similar in construction to DRAM, both use a capacitor and transistor but instead of using a simple dielectric layer the capacitor, an F-RAM cell contains a thin ferroelectric film of lead zirconate titanate [Pb(Zr,Ti)O 3], commonly referred to as PZT. The Zr/Ti atoms in ...
Non-volatile random-access memory (NVRAM) is random-access memory that retains data without applied power. This is in contrast to dynamic random-access memory (DRAM) and static random-access memory (SRAM), which both maintain data only for as long as power is applied, or forms of sequential-access memory such as magnetic tape, which cannot be randomly accessed but which retains data ...
Read-only memory (ROM) is a type of non-volatile memory used in computers and other electronic devices. Data stored in ROM cannot be electronically modified after the manufacture of the memory device. Read-only memory is useful for storing software that is rarely changed during the life of the system, also known as firmware.
One manifestation of data degradation is when one or a few bits are randomly flipped over a long period of time. [14] This is illustrated by several digital images below, all consisting of 326,272 bits. The original photo is displayed first. In the next image, a single bit was changed from 0 to 1. In the next two images, two and three bits were ...
Usually, only one cell of a memory is affected, although high energy events can cause a multi-cell upset. Conventional memory layout usually places one bit of many different correction words adjacent on a chip.
SONOS is a cross-sectional structure of MOSFET used in Non-volatile memory such as EEPROM and flash memories. nvSRAM combines the standard SRAM cells with EEPROM cells in SONOS technology [4] to provide a fast read/write access and 20 years of data retention without power. The SRAM cells are paired one-to-one with EEPROM cells.