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Since copper is a better conductor than aluminium, ICs using copper for their interconnects can have interconnects with narrower dimensions, and use less energy to pass electricity through them. Together, these effects lead to ICs with better performance. They were first introduced by IBM, with assistance from Motorola, in 1997. [1]
By insulating copper interconnects (wires) on an integrated circuit (IC) with vacuum holes, capacitance can be minimized enabling ICs to work faster or draw less power. A vacuum is believed to be the ultimate insulator for wiring capacitance, which occurs when two adjacent wires on an IC draw electrical energy from one another, generating undesirable heat and slowing the speed at which data ...
The RS64-III has 34 million transistors, a die size of 140 mm², and is manufactured on the 0.22 μm CMOS 7S process with six levels of copper interconnect. In 2000, IBM launched a refined version called IStar manufactured with a SOI fabrication process with copper interconnects, which increased the processor's clock frequency to 600 MHz. This ...
It uses a combination of the POWER2 ISA and the 32/64-bit PowerPC ISA set with support for SMP and single-chip implementation. It was used to great extent in IBM's RS/6000 computers, and the second generation version, the POWER3-II, is the first commercially available processor from IBM using copper interconnects. The POWER3 is the last ...
In 1999, IBM fabricated versions in a 0.20 μm process with copper interconnects, which increased the frequency up to 500 MHz and decreased power consumption to 6 W and the die size to 40 mm 2. The 740 slightly outperformed the Pentium II while consuming far less power and with a smaller die. The off-die L2 cache of the 750 increased ...
The BEOL process deposits metalization layers on the silicion to interconnect the individual devices generated during FEOL (bottom). CMOS fabrication process. Back end of the line or back end of line (BEOL) is a process in semiconductor device fabrication that consists of depositing metal interconnect layers onto a wafer already patterned with devices.
It is fabricated by IBM in a 0.13 μm silicon on insulator (SOI) complementary metal–oxide–semiconductor (CMOS) process with eight layers of copper interconnect. The POWER5 die is packaged in either a dual chip module (DCM) or a multi-chip module (MCM). The DCM contains one POWER5 die and its associated L3 cache die.
The IBM System/390 is a discontinued mainframe product family implementing ESA/390, ... In late May 1999 the G6 arrived featuring copper interconnects, ...