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  2. Front end of line - Wikipedia

    en.wikipedia.org/wiki/Front_end_of_line

    Illustration of FEOL (device generation in the silicon, bottom) and BEOL (depositing metalization layers, middle part) to connect the devices. CMOS fabrication process. The front end of line (FEOL) is the first portion of IC fabrication where the individual components (transistors, capacitors, resistors, etc.) are patterned in a semiconductor substrate. [1]

  3. CMOS - Wikipedia

    en.wikipedia.org/wiki/CMOS

    CMOS inverter (a NOT logic gate). Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss ", / s iː m ɑː s /, /-ɒ s /) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. [1]

  4. 2 nm process - Wikipedia

    en.wikipedia.org/wiki/2_nm_process

    In semiconductor manufacturing, the 2 nm process is the next MOSFET (metal–oxide–semiconductor field-effect transistor) die shrink after the 3 nm process node.. The term "2 nanometer", or alternatively "20 angstrom" (a term used by Intel), has no relation to any actual physical feature (such as gate length, metal pitch or gate pitch) of the transistors.

  5. Shallow trench isolation - Wikipedia

    en.wikipedia.org/wiki/Shallow_trench_isolation

    The shallow trench isolation fabrication process of modern integrated circuits in cross-sections. Shallow trench isolation (STI), also known as box isolation technique, is an integrated circuit feature which prevents electric current leakage between adjacent semiconductor device components.

  6. Integrated circuit layout - Wikipedia

    en.wikipedia.org/wiki/Integrated_circuit_layout

    Layout view of a simple CMOS operational amplifier. In integrated circuit design, integrated circuit (IC) layout, also known IC mask layout or mask design, is the representation of an integrated circuit in terms of planar geometric shapes which correspond to the patterns of metal, oxide, or semiconductor layers that make up the components of the integrated circuit.

  7. Process design kit - Wikipedia

    en.wikipedia.org/wiki/Process_Design_Kit

    A process design kit (PDK) is a set of files used within the semiconductor industry to model a fabrication process for the design tools used to design an integrated circuit. The PDK is created by the foundry defining a certain technology variation for their processes. It is then passed to their customers to use in the design process.

  8. 32 nm process - Wikipedia

    en.wikipedia.org/wiki/32_nm_process

    The "32 nm" node is the step following the "45 nm" process in CMOS semiconductor device fabrication. "32-nanometre" refers to the average half-pitch (i.e., half the distance between identical features) of a memory cell at this technology level. Toshiba produced commercial 32 GiB NAND flash memory chips with the "32 nm" process in 2009. [1]

  9. Tape-out - Wikipedia

    en.wikipedia.org/wiki/Tape-out

    In electronics and photonics design, tape-out or tapeout is the final stage of the design process for integrated circuits or printed circuit boards before they are sent for manufacturing. The tapeout is specifically the point at which the graphic for the photomask of the circuit is sent to the fabrication facility. The name originates from the ...