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Illustration of FEOL (device generation in the silicon, bottom) and BEOL (depositing metalization layers, middle part) to connect the devices. CMOS fabrication process. The front end of line (FEOL) is the first portion of IC fabrication where the individual components (transistors, capacitors, resistors, etc.) are patterned in a semiconductor substrate. [1]
The shallow trench isolation fabrication process of modern integrated circuits in cross-sections. Shallow trench isolation (STI), also known as box isolation technique, is an integrated circuit feature which prevents electric current leakage between adjacent semiconductor device components.
A recipe in semiconductor manufacturing is a list of conditions under which a wafer will be processed by a particular machine in a processing step during manufacturing. [158] Process variability is a challenge in semiconductor processing, in which wafers are not processed evenly or the quality or effectiveness of processes carried out on a ...
CMOS inverter (a NOT logic gate). Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss ", / s iː m ɑː s /, /-ɒ s /) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. [1]
A process design kit (PDK) is a set of files used within the semiconductor industry to model a fabrication process for the design tools used to design an integrated circuit. The PDK is created by the foundry defining a certain technology variation for their processes. It is then passed to their customers to use in the design process.
The "32 nm" node is the step following the "45 nm" process in CMOS semiconductor device fabrication. "32-nanometre" refers to the average half-pitch (i.e., half the distance between identical features) of a memory cell at this technology level. Toshiba produced commercial 32 GiB NAND flash memory chips with the "32 nm" process in 2009. [1]
Die singulation, also called wafer dicing, is the process in semiconductor device fabrication by which dies are separated from a finished wafer of semiconductor. [1] It can involve scribing and breaking, mechanical sawing (normally with a machine called a dicing saw) [2] or laser cutting.
The original HMOS process, later referred to as HMOS I, had a channel length of 3 microns, which was reduced to 2 for the HMOS II, and 1.5 for HMOS III. By the time HMOS III was introduced in 1982, Intel had begun a switch to their CHMOS process, a CMOS process using design elements of the HMOS lines. One final version of the system was ...