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Illustration of FEOL (device generation in the silicon, bottom) and BEOL (depositing metalization layers, middle part) to connect the devices. CMOS fabrication process. The front end of line (FEOL) is the first portion of IC fabrication where the individual components (transistors, capacitors, resistors, etc.) are patterned in a semiconductor substrate. [1]
A process design kit (PDK) is a set of files used within the semiconductor industry to model a fabrication process for the design tools used to design an integrated circuit. The PDK is created by the foundry defining a certain technology variation for their processes. It is then passed to their customers to use in the design process.
The shallow trench isolation fabrication process of modern integrated circuits in cross-sections. Shallow trench isolation (STI), also known as box isolation technique, is an integrated circuit feature which prevents electric current leakage between adjacent semiconductor device components.
Technology files and design rules are essential building blocks of the integrated circuit design process. Their accuracy and robustness over process technology, its variability and the operating conditions of the IC—environmental, parasitic interactions and testing, including adverse conditions such as electro-static discharge—are critical in determining performance, yield and reliability.
Layout view of a simple CMOS operational amplifier. In integrated circuit design, integrated circuit (IC) layout, also known IC mask layout or mask design, is the representation of an integrated circuit in terms of planar geometric shapes which correspond to the patterns of metal, oxide, or semiconductor layers that make up the components of the integrated circuit.
In electronics and photonics design, tape-out or tapeout is the final stage of the design process for integrated circuits or printed circuit boards before they are sent for manufacturing. The tapeout is specifically the point at which the graphic for the photomask of the circuit is sent to the fabrication facility. The name originates from the ...
In semiconductor manufacturing, the 2 nm process is the next MOSFET (metal–oxide–semiconductor field-effect transistor) die shrink after the 3 nm process node.. The term "2 nanometer", or alternatively "20 angstrom" (a term used by Intel), has no relation to any actual physical feature (such as gate length, metal pitch or gate pitch) of the transistors.
Simplified illustration of the process of fabrication of a CMOS inverter on p-type substrate in semiconductor microfabrication. Each etch step is detailed in the following image. The diagrams are not to scale, as in real devices, the gate, source, and drain contacts are not normally located in the same plane. Detail of an etch step.