Ad
related to: tunnel diode construction and working system
Search results
Results from the WOW.Com Content Network
A tunnel diode or Esaki diode is a type of semiconductor diode that has effectively "negative resistance" due to the quantum mechanical effect called tunneling. It was invented in August 1957 by Leo Esaki and Yuriko Kurose when working at Tokyo Tsushin Kogyo, now known as Sony .
A resonant-tunneling diode (RTD) is a diode with a resonant-tunneling structure in which electrons can tunnel through some resonant states at certain energy levels. The current–voltage characteristic often exhibits negative differential resistance regions. All types of tunneling diodes make use of quantum mechanical tunneling. Characteristic ...
Tunneling applications include the tunnel diode, [5] quantum computing, flash memory, and the scanning tunneling microscope. Tunneling limits the minimum size of devices used in microelectronics because electrons tunnel readily through insulating layers and transistors that are thinner than about 1 nm.
Consequently, tunnel diode logic circuits required a means to reset the diode after each logical operation. However, a simple tunnel diode gate offered little isolation between inputs and outputs and had low fan in and fan out. More complex gates, with additional tunnel diodes and bias power supplies, overcame some of these limitations. [7]
The tunnel diode circuit (see diagram) is an example. [82] The tunnel diode TD has voltage controlled negative differential resistance. [54] The battery adds a constant voltage (bias) across the diode so it operates in its negative resistance range, and provides power to amplify the signal.
ANSI and IEC standard schematic symbol for a circulator (with each waveguide or transmission line port drawn as a single line, rather than as a pair of conductors). In electrical engineering, a circulator is a passive, non-reciprocal three- or four-port device that only allows a microwave or radio-frequency (RF) signal to exit through the port directly after the one it entered.
The tunnel field-effect transistor (TFET) is an experimental type of transistor. Even though its structure is very similar to a metal–oxide–semiconductor field-effect transistor ( MOSFET ), the fundamental switching mechanism differs, making this device a promising candidate for low power electronics .
In electronics, a tunnel junction is a barrier, such as a thin insulating layer or electric potential, between two electrically conducting materials. Electrons (or quasiparticles ) pass through the barrier by the process of quantum tunnelling .
Ad
related to: tunnel diode construction and working system