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The introduction of the transistor is often considered one of the most important inventions in history. [1] [2] Transistors are broadly classified into two categories: bipolar junction transistor (BJT) and field-effect transistor (FET). [3] The principle of a field-effect transistor was proposed by Julius Edgar Lilienfeld in 1925. [4]
The concept of a field-effect transistor was first theorized by Julius Edgar Lilienfeld in 1925. [102] The first practical transistor was the point-contact transistor , invented by the engineers Walter Houser Brattain and John Bardeen while working for William Shockley at Bell Labs in 1947.
The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n–p–n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p ...
The Early effect in bipolar junction transistors is due to an effective decrease in the base width because of the widening of the base-collector depletion region, resulting in an increase in the collector current with an increase in the collector voltage. The same type of length modulation in MOSFETs is also commonly referred to as Early effect.
The first transistor hi-fi system was developed by engineers at GE and demonstrated at the University of Philadelphia in 1955. [9] In terms of commercial production, The Fisher TR-1 was the first "all transistor" preamplifier, which became available mid-1956. [10] In 1961, a company named Transis-tronics released a solid-state amplifier, the ...
It is not just about the density of transistors that can be achieved, but about the density of transistors at which the cost per transistor is the lowest. [140] As more transistors are put on a chip, the cost to make each transistor decreases, but the chance that the chip will not work due to a defect increases.
The invention of the high-electron-mobility transistor (HEMT) is usually attributed to physicist Takashi Mimura (三村 高志), while working at Fujitsu in Japan. [4] The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard silicon (Si) MOSFET since 1977.
Cross-sectional view of a MOSFET type field-effect transistor, showing source, gate and drain terminals, and insulating oxide layer. The field-effect transistor (FET) is a type of transistor that uses an electric field to control the current through a semiconductor. It comes in two types: junction FET (JFET) and metal-oxide-semiconductor FET ...