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  2. Wafer bonding - Wikipedia

    en.wikipedia.org/wiki/Wafer_bonding

    Wafer bonding is a packaging technology on wafer-level for the fabrication of microelectromechanical systems (MEMS), nanoelectromechanical systems (NEMS), microelectronics and optoelectronics, ensuring a mechanically stable and hermetically sealed encapsulation. The wafers' diameter range from 100 mm to 200 mm (4 inch to 8 inch) for MEMS/NEMS ...

  3. Adhesive bonding of semiconductor wafers - Wikipedia

    en.wikipedia.org/wiki/Adhesive_bonding_of...

    The wafers can be cleaned using H 2 O 2 + H 2 SO 4 or oxygen plasma. The cleaned wafers are rinsed with DI water and dried at elevated temperature, e.g. 100 to 200 °C for 120 min. [17] The adhesion promoter with a specific thickness is deposited, i.e. spin-coated or contact printed on the wafer to improve the bonding strength.

  4. Direct bonding - Wikipedia

    en.wikipedia.org/wiki/Direct_bonding

    The procedural steps of the direct bonding process of wafers any surface is divided into wafer preprocessing, pre-bonding at room temperature and; annealing at elevated temperatures. Even though direct bonding as a wafer bonding technique is able to process nearly all materials, silicon is the most established material up to now. Therefore, the ...

  5. Semiconductor device fabrication - Wikipedia

    en.wikipedia.org/wiki/Semiconductor_device...

    Wafer backgrinding and polishing [133] (reduces the thickness of the wafer for thin devices like a smartcard or PCMCIA card or wafer bonding and stacking, this can also occur during wafer dicing, in a process known as Dice Before Grind or DBG [134] [135]) Wafer bonding and stacking (for three-dimensional integrated circuits and MEMS)

  6. Category:Wafer bonding - Wikipedia

    en.wikipedia.org/wiki/Category:Wafer_bonding

    Wafer bonding is a packaging technology for materials integration as well as for hermetic sealing and encapsulation. This method describes the process for all ...

  7. Thermocompression bonding - Wikipedia

    en.wikipedia.org/wiki/Thermocompression_bonding

    2. Typically, thermocompression bonds are made with delivering heat and pressure to the mating surface by a hard faced bonding tool. Compliant bonding [11] is a unique method of forming this type of solid state bond between a gold lead and a gold surface since heat and pressure is transmitted through a compliant or deformable media. The use of ...

  8. Integrated circuit packaging - Wikipedia

    en.wikipedia.org/wiki/Integrated_circuit_packaging

    The following operations are performed at the packaging stage, as broken down into bonding, encapsulation, and wafer bonding steps. Note that this list is not all-inclusive and not all of these operations are performed for every package, as the process is highly dependent on the package type. IC bonding. Wire bonding; Thermosonic Bonding; Down ...

  9. Surface activated bonding - Wikipedia

    en.wikipedia.org/wiki/Surface_activated_bonding

    Surface activated bonding (SAB) is a non-high-temperature wafer bonding technology with atomically clean and activated surfaces. Surface activation prior to bonding by using fast atom bombardment is typically employed to clean the surfaces. High-strength bonding of semiconductors, metals, and dielectrics can be obtained even at room temperature ...